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MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products] http:// Maxim Integrated Products, Inc. MAXIM INTEGRATED PRODUCTS INC
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Part No. |
MAX6740XKD-T MAX6741XKD-T MAX6742XKD-T MAX6743XKD-T MAX6744 MAX6744XKD-T MAX6745XKD-T MAX6736 MAX6736XKD-T MAX6737XKD-T MAX6738XKD-T MAX6739XKD-T MAX6737 MAX6738 MAX6736XKL MAX6736XKM MAX6736XKR MAX6736XKS MAX6736XKT MAX6736XKV MAX6736XKW MAX6736XKY MAX6736XKZ MAX6737XKL MAX6737XKM MAX6737XKR MAX6737XKS MAX6737XKT MAX6737XKV MAX6737XKW MAX6737XKY MAX6737XKZ MAX6740XKL MAX6740XKM MAX6740XKR MAX6740XKS MAX6740XKT MAX6740XKV MAX6740XKW MAX6740XKY MAX6740XKZ MAX6745XKZD7-T MAX6738XKLD3-T MAX6738XKLD7-T MAX6738XKMD3-T MAX6738XKMD7-T MAX6738XKRD3-T MAX6738XKRD7-T MAX6738XKSD3-T MAX6738XKSD7-T MAX6738XKTD3-T MAX6738XKTD7-T MAX6738XKVD3-T MAX6738XKVD7-T MAX6738XKWD3-T MAX6738XKWD7-T MAX6738XKYD3-T MAX6738XKYD7-T MAX6738XKZD3-T MAX6738XKZD7-T MAX6739XKLD3-T MAX6739XKLD7-T MAX6739XKMD3-T MAX6739XKMD7-T MAX6739XKRD3-T MAX6739XKRD7-T MAX6739XKSD3-T MAX6739XKSD7-T MAX6739XKTD3-T MAX6739XKTD7-T MAX6739XKVD3-T MAX6739XKVD7-T MAX6739XKWD3-T MAX6739XKWD7-T MAX6741XKR MAX6741XKS MAX6741XKT MAX6741XKV MAX6741XKW MAX6741XKY MAX6741XKZ MAX6742XKLD3-T MAX6742XKLD7-T MAX6742XKMD3-T MAX6742XKMD7-T MAX6742XKRD3-T MAX6742XKRD7-T MAX6742XKSD3-T MAX6742XKSD7-T MAX6742XKTD3-T MAX6742XKTD7-T MAX6742XKVD3-T MAX6
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Description |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits Low-Power Dual-/Triple-Voltage SC70 ?P Supervisory Circuits (MAX6736 - MAX6745) Low-Power Dual-/Triple-Voltage SC70 UP Supervisory Circuits Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5 Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
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File Size |
233.66K /
16 Page |
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Vishay Semiconductors
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Part No. |
150K60A 150KS30 150KR30A 150KS30PBF
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Description |
150 A, 600 V, SILICON, RECTIFIER DIODE, DO-205AA DIODE 150 A, 300 V, SILICON, RECTIFIER DIODE, B-42, 1 PIN, Rectifier Diode 150 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AA
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File Size |
193.42K /
8 Page |
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Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
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Part No. |
6116SA150SOB 6116LA20SOB 6116LA150SOB 6116SA120SOB 6116LA25SOB 6116SA25SOB 6116LA120SOB 6116SA20SOB 6116LA150TPB 6116LA70YB 6116LA150TDB 6116LA20P
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Description |
2K X 8 STANDARD SRAM, 150 ns, PDSO24 0.300 INCH, SOIC-24 2K X 8 STANDARD SRAM, 19 ns, PDSO24 0.300 INCH, SOIC-24 2K X 8 STANDARD SRAM, 120 ns, PDSO24 0.300 INCH, SOIC-24 2K X 8 STANDARD SRAM, 25 ns, PDSO24 0.300 INCH, SOIC-24 2K X 8 STANDARD SRAM, 150 ns, PDIP24 2K X 8 STANDARD SRAM, 70 ns, PDSO24 2K X 8 STANDARD SRAM, 150 ns, CDIP24 2K X 8 STANDARD SRAM, 19 ns, PDIP24
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File Size |
557.03K /
10 Page |
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Microsemi, Corp. Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
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Part No. |
1214-300M
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Description |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR 300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
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File Size |
117.23K /
4 Page |
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Price and Availability
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