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Maxim
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| Part No. |
MAX8720EVKIT
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| OCR Text |
...25BJ106MM Not installed, 1000F, 50V aluminum electrolytic capacitor (12.5mm x 25mm) Sanyo 50MV1000AX 1000pF 10%, 50V C0G ceramic capacitors ...0.1F 10%, 25V X7R ceramic capacitor (0603) Murata GRM188R71E104K or TDK C1608X7R1E104K 1F 20%, 10V X... |
| Description |
Evaluation Kit for the MAX8720 From old datasheet system
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| File Size |
590.26K /
10 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
PSMN5R6-100XS
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| OCR Text |
...rge v gs =10v; i d =15a; v ds =50v; see figure 14 ; see figure 15 -41.2-nc q g(tot) total gate charge - 145 - nc avalanche ruggedness e ...0 20 40 60 80 0 50 100 150 200 t mb ( c) i d (a) t mb (c) 0 200 150 50 100 03aa16 40 80 120 p de... |
| Description |
N-channel 100V 5.6 m standard level MOSFET in TO220F (SOT186A)
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| File Size |
214.41K /
15 Page |
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it Online |
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Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
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| Part No. |
FS30VSJ-2 FS3UM-16
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| OCR Text |
... Reverse recovery time
VDD = 50V, ID = 15A, VGS = 10V, RGEN = RGS = 50
IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = -100A/s
...0
0
50
100
150
200
100 7 5 3
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
43.03K /
4 Page |
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it Online |
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Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
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| Part No. |
FS30VS-2
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| OCR Text |
... Reverse recovery time
VDD = 50V, ID = 15A, VGS = 10V, RGEN = RGS = 50
-- -- -- -- -- --
IS = 15A, VGS = 0V Channel to case IS = 30...0
0
50
100
150
200
100 10ms 7 TC = 25C 5 Single Pulse DC 3 3 5 7 100 2 3 5 7 101 2... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
42.41K /
4 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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| Part No. |
PSMN7R0-100XS
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| OCR Text |
...arge v gs =10v; i d =15a; v ds =50v; see figure 14 ; see figure 15 -34-nc q g(tot) total gate charge - 121 - nc avalanche ruggedness e ds(...0 10 20 30 40 50 60 0 50 100 150 200 t mb ( c) i d (a) t mb (c) 0 200 150 50 100 03aa16 40 80 12... |
| Description |
N-channel 100V 6.8 m standard level MOSFET in TO220F (SOT186A)
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| File Size |
211.16K /
15 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
PSMN016-100BS
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| OCR Text |
...arge v gs =10v; i d =30a; v ds =50v; see figure 14 ; see figure 15 -15-nc q g(tot) total gate charge - 49 - nc avalanche ruggedness e ds(...0 20 40 60 80 0 50 100 150 200 t mb ( c) i d (a) t mb (c) 0 200 150 50 100 03aa16 40 80 120 p de... |
| Description |
N-channel 100V 16 m standard level MOSFET in D2PAK
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| File Size |
196.38K /
14 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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| Part No. |
PSMN016-100YS PSMN016-100YS11
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| OCR Text |
...rge v gs =10v; i d =30a; v ds =50v; see figure 14 ; see figure 15 -16-nc q g(tot) total gate charge - 54 - nc avalanche ruggedness e ds(...0 20 40 60 0 50 100 150 200 t mb ( c) i d (a) t mb (c) 0 200 150 50 100 03aa16 40 80 120 p der (... |
| Description |
N-channel 100 V 16.3 m standard level MOSFET in LFPAK N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
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| File Size |
296.01K /
15 Page |
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it Online |
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Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
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| Part No. |
FS30KMJ-2
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| OCR Text |
... Reverse recovery time
VDD = 50V, ID = 15A, VGS = 10V, RGEN = RGS = 50
IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = -100A/s
...0
0
50
100
150
200
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS ... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
46.66K /
4 Page |
View
it Online |
Download Datasheet
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