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  -50v-0.15a Datasheet PDF File

For -50v-0.15a Found Datasheets File :: 1177    Search Time::1.031ms    
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    Maxim
Part No. MAX8720EVKIT
OCR Text ...25BJ106MM Not installed, 1000F, 50V aluminum electrolytic capacitor (12.5mm x 25mm) Sanyo 50MV1000AX 1000pF 10%, 50V C0G ceramic capacitors ...0.1F 10%, 25V X7R ceramic capacitor (0603) Murata GRM188R71E104K or TDK C1608X7R1E104K 1F 20%, 10V X...
Description Evaluation Kit for the MAX8720
From old datasheet system

File Size 590.26K  /  10 Page

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    NXP Semiconductors N.V.
Part No. PSMN5R6-100XS
OCR Text ...rge v gs =10v; i d =15a; v ds =50v; see figure 14 ; see figure 15 -41.2-nc q g(tot) total gate charge - 145 - nc avalanche ruggedness e ...0 20 40 60 80 0 50 100 150 200 t mb ( c) i d (a) t mb (c) 0 200 150 50 100 03aa16 40 80 120 p de...
Description N-channel 100V 5.6 m standard level MOSFET in TO220F (SOT186A)

File Size 214.41K  /  15 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS30VSJ-2 FS3UM-16
OCR Text ... Reverse recovery time VDD = 50V, ID = 15A, VGS = 10V, RGEN = RGS = 50 IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = -100A/s ...0 0 50 100 150 200 100 7 5 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 43.03K  /  4 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS30VS-2
OCR Text ... Reverse recovery time VDD = 50V, ID = 15A, VGS = 10V, RGEN = RGS = 50 -- -- -- -- -- -- IS = 15A, VGS = 0V Channel to case IS = 30...0 0 50 100 150 200 100 10ms 7 TC = 25C 5 Single Pulse DC 3 3 5 7 100 2 3 5 7 101 2...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 42.41K  /  4 Page

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    NXP Semiconductors N.V.
Part No. PSMN7R0-100XS
OCR Text ...arge v gs =10v; i d =15a; v ds =50v; see figure 14 ; see figure 15 -34-nc q g(tot) total gate charge - 121 - nc avalanche ruggedness e ds(...0 10 20 30 40 50 60 0 50 100 150 200 t mb ( c) i d (a) t mb (c) 0 200 150 50 100 03aa16 40 80 12...
Description N-channel 100V 6.8 m standard level MOSFET in TO220F (SOT186A)

File Size 211.16K  /  15 Page

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    NXP Semiconductors N.V.
Part No. PSMN016-100BS
OCR Text ...arge v gs =10v; i d =30a; v ds =50v; see figure 14 ; see figure 15 -15-nc q g(tot) total gate charge - 49 - nc avalanche ruggedness e ds(...0 20 40 60 80 0 50 100 150 200 t mb ( c) i d (a) t mb (c) 0 200 150 50 100 03aa16 40 80 120 p de...
Description N-channel 100V 16 m standard level MOSFET in D2PAK

File Size 196.38K  /  14 Page

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    AP40T10GI-HF AP40T10GI-HF14

Advanced Power Electronics Corp.
Part No. AP40T10GI-HF AP40T10GI-HF14
OCR Text ...c q gs gate-source charge v ds =50v - 5.4 - nc q gd gate-drain ("miller") charge v gs =10v - 9.6 - nc t d(on) turn-on delay time 2 v ds =50v...0 v , - 60 - ns q rr reverse recovery charge di/dt=100a/s - 125 - nc notes: 1.pulse width limited by...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Single Drive Requirement

File Size 91.60K  /  4 Page

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    NXP Semiconductors N.V.
Part No. PSMN016-100YS PSMN016-100YS11
OCR Text ...rge v gs =10v; i d =30a; v ds =50v; see figure 14 ; see figure 15 -16-nc q g(tot) total gate charge - 54 - nc avalanche ruggedness e ds(...0 20 40 60 0 50 100 150 200 t mb ( c) i d (a) t mb (c) 0 200 150 50 100 03aa16 40 80 120 p der (...
Description N-channel 100 V 16.3 m standard level MOSFET in LFPAK
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK

File Size 296.01K  /  15 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS30KMJ-2
OCR Text ... Reverse recovery time VDD = 50V, ID = 15A, VGS = 10V, RGEN = RGS = 50 IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = -100A/s ...0 0 50 100 150 200 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS ...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 46.66K  /  4 Page

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    AP40T10GH

Advanced Power Electronics Corp.
Part No. AP40T10GH
OCR Text ...c q gs gate-source charge v ds =50v - 5.4 - nc q gd gate-drain ("miller") charge v gs =10v - 9.6 - nc t d(on) turn-on delay time 2 v ds =50v...0 v , - 60 - ns q rr reverse recovery charge di/dt=100a/s - 125 - nc notes: 1.pulse width limited by...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 124.38K  /  5 Page

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