w-cdma pdf Datasheet P9 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : BM01N60 C7SZ0 EP05DA40 CY101 1117S VS2ASF ENA0935 PK682
	Product Description
	Full Text Search

w-cdma Datasheet PDF File

For w-cdma Found Datasheets File :: 3215 Search Time::2.469ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				Freescale (Motorola) MOTOROLA[Motorola, Inc]
Part No.	MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3
OCR Text	...ffect Transistors Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u...
Description	2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors
File Size	558.64K / 12 Page	View it Online	Download Datasheet

				M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution...
Part No.	NPTB00004
OCR Text	w-cdma, lte, and other applications from dc to 6ghz ? 100% rf tested at 2500mhz ? 5w p3db cw power ? 15.5db power gain ? low cost, surface mount soic package ? high reliability gold metallization process ? lead-free and rohs complian...
Description	Gallium Nitride 28V, 5W RF Power Transistor
File Size	944.68K / 10 Page	View it Online	Download Datasheet

				Freescale Semiconductor
Part No.	MRF8P23080HR3
OCR Text	...e Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Doherty Single--Carrie...
Description	RF Power Field Effect Transistors
File Size	689.62K / 15 Page	View it Online	Download Datasheet

				Freescale Semiconductor
Part No.	MRF8P20160HSR3
OCR Text	... Typical Doherty Single-Carrier w-cdma Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency ...
Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
File Size	300.81K / 15 Page	View it Online	Download Datasheet

				Motorola Semiconductor Products
Part No.	MRF8P20160HR3
OCR Text	...Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency...
Description	RF Power Field Effect Transistors
File Size	833.61K / 17 Page	View it Online	Download Datasheet

				Mini-Circuits http://
Part No.	KSN-2354N-219
OCR Text	...ate from 2294 to 2354 mhz for w-cdma application. the ksn-2354n-219+ is packaged in a metal case (size of 0.80" x 0.58" x 0.15") to shield against unwanted signals and noise. key features feature advantages low phase noise and spuriou...
Description	Frequency Synthesizer
File Size	747.09K / 11 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF6S27085HR3 MRF6S27085HSR3
OCR Text	...6S27085HSR3 2600- 2700 MHz, 20 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S27085HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S27085HSR3 Table 1. Maximum Ratings Rating Drain...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	388.87K / 11 Page	View it Online	Download Datasheet

				wj
Part No.	AH215
OCR Text	...logies such as GPRS, GSM, CDMA, w-cdma, and UMTS, where high linearity and high power is required. The internal active bias allows the AH215 to maintain high linearity over temperature and operate directly off a +5 V supply. Functional D...
Description	Amplifier
File Size	122.77K / 4 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF6S27015NR108
OCR Text	...ons. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 160 mA, Pout = 3 Watts Avg., f = 2600 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 14 dB Drain Efficiency -- 22% ACPR ...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	627.95K / 19 Page	View it Online	Download Datasheet

				HITTITE[Hittite Microwave Corporation]
Part No.	HMC455LP3
OCR Text	... 56% PAE @ +28 dBm Pout +19 dBm w-cdma Channel Power @ -45 dBc ACP 3 x 3 x 1 mm QFN SMT Package 8 AMPLIFIERS - SMT Typical Applications This amplifier is ideal for high linearity applications: * Multi-Carrier Systems * GSM, GPRS & E...
Description	InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz
File Size	306.34K / 8 Page	View it Online	Download Datasheet

For w-cdma Found Datasheets File :: 3215 Search Time::2.469ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |