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5558GS8 SI4906DY TH1385 1N4917 STC8550S PU3120P FN2105 E003270
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  w nov Datasheet PDF File

For w nov Found Datasheets File :: 7215    Search Time::1.828ms    
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    Vishay Semiconductors
Part No. BYw29-200
OCR Text ...se per leg r jc 2.5 5.5 2.5 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery...nov-07 for technical questions within your r egion, please contact one of the following: pdd-america...
Description ULTRA FAST RECOVERY RECTFR 200V 8A 2PIN TO-220AC - Rail/Tube

File Size 128.26K  /  5 Page

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    AN822 SI7905DN-T1-GE3 SI7905DN-T1-E3

Vishay Siliconix
Part No. AN822 SI7905DN-T1-GE3 SI7905DN-T1-E3
OCR Text ...e) powerpak 1212-8 bottom v ie w 1 2 3 4 5 6 7 8 s1 g1 s2 g2 d1 d1 d2 d2 3.30 mm 3.30 mm s g d p-channel mosfet s g d p-channel mosfet 2 2 ...nov-11 vishay siliconix si7905dn this document is subject to change without notice. the products des...
Description Dual P-Channel 40 V (D-S) MOSFET
Trans MOSFET P-CH 40V 5A 8-Pin PowerPAK 1212 T/R

File Size 556.24K  /  13 Page

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    Ruichips Semiconductor Co., Ltd
Part No. RU80190R
OCR Text ...ower dissipation t c =100 c 125 w r q jc thermal resistance - junction to case 0.6 c /w drain - source avalanche ratings e as avalanche ene...nov ., 2010 2 www. ruichips .com ru 8019 0r electrical characteristics ( t a =25 c unless otherwis...
Description N-Channel Advanced Power MOSFET

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    SI4909DY SI4909DY-T1-GE3

Vishay Siliconix
Part No. SI4909DY SI4909DY-T1-GE3
OCR Text ...eady stat e conditions is 110 c/w. d. based on t c = 25 c. e. limited by package. absolute maximum ratings (t a = 25 c, unless otherwise ...nov-10 vishay siliconix si4909dy new product notes: a. pulse test; pulse width ? 300 s, duty cycle...
Description Dual P-Channel 40 V (D-S) MOSFET

File Size 270.75K  /  10 Page

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    SI4906DY SI4906DY-T1-E3

Vishay Siliconix
Part No. SI4906DY SI4906DY-T1-E3
OCR Text ...eady stat e conditions is 110 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source ...nov-09 vishay siliconix si4906dy notes: a. guaranteed by design, not s ubject to production testing....
Description Dual N-Channel 40-V (D-S) MOSFET

File Size 264.54K  /  10 Page

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    BCR16PR-12LBA8B00 BCR16PR-12LBB00

Renesas Electronics Corporation
Part No. BCR16PR-12LBA8B00 BCR16PR-12LBB00
OCR Text ...gate power dissipation p gm 5 w average gate power dissipation p g (av) 0.5 w peak gate voltage v gm 10 v peak gate current i ...nov 28, 2012 bcr16pr-12lb preliminary r07ds0974ej0001 rev.0.01 page 2 of 3 nov 28, 2012 ...
Description 600V - 16A - Triac Medium Power Use

File Size 64.00K  /  4 Page

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    RJK03P7DPA-00-J5A

Renesas Electronics Corporation
Part No. RJK03P7DPA-00-J5A
OCR Text ...issipation pch note3 10 20 w channel temperature tch 150 150 c storage temperature tstg ?55 to +150 ?55 to +150 c notes: 1...nov 01, 2012 rjk03p7dpa preliminary r07ds0906ej0110 rev.1.10 page 2 of 10 nov 01, 2012 ...
Description MOS2 30 V, 30 A, 5.3 m max. High Speed Power Switching

File Size 259.83K  /  11 Page

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    RJK03P6DPA RJK03P6DPA-00-J5A

Renesas Electronics Corporation
Part No. RJK03P6DPA RJK03P6DPA-00-J5A
OCR Text ...issipation pch note3 10 30 w channel temperature tch 150 150 c storage temperature tstg ?55 to +150 ?55 to +150 c notes: 1...nov 01, 2012 rjk03p6dpa preliminary r07ds0905ej0110 rev.1.10 page 2 of 10 nov 01, 2012 ...
Description Built in SBD Dual N-channel Power MOS FET High Speed Power Switching

File Size 239.43K  /  11 Page

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    BPW85C BPW85 BPW85B BPW85A

Vishay Telefunken
VISAY[Vishay Siliconix]
Part No. BPw85C BPw85 BPw85B BPw85A
OCR Text ...0 450 Unit V V mA mA mw C C C K/w tp/T = 0.5, tp 10 ms Tamb 55 C x x t x 3 s, 2 mm from case Document Number 81531 Rev. 3, 16-nov-99 www.vishay.de * FaxBack +1-408-970-5600 1 (6) BPw85 Vishay Telefunken Basic Charac...
Description Silicon NPN Phototransistor
From old datasheet system

File Size 86.08K  /  6 Page

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    SQJ456EP-T1-GE3

Vishay Siliconix
Part No. SQJ456EP-T1-GE3
OCR Text ...ssipation b t c = 25 c p d 83 w t c = 125 c 27 operating junction and storage temperature range t j , t stg - 55 to + 175 c soldering ...nov-11 2 document number: 65279 this document is subject to change without notice. the products desc...
Description Automotive N-Channel 100 V (D-S) 175 °C MOSFET

File Size 114.41K  /  7 Page

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For w nov Found Datasheets File :: 7215    Search Time::1.828ms    
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