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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ... (1.6mm from case ) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...31/02 IRF1302 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

File Size 516.95K  /  9 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ... 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 7...31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO ...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

File Size 105.83K  /  9 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...o 150 300 260 UNITS V V A A A V w w/oC mJ oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanen...31 19 24 0.45 0.68 14 35 47 29 35 S ns ns ns ns nC - 5.1 12 - nC nC 5-2 IR...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POwER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ... (1.6mm from case ) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient (PCB M...31 50 16 140 68 120 4.5 7.5 5310 890 130 6010 570 1140 Max. Units Conditions --- V VGS = 0V, ID =...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ... 10 lbf*in (1.1N*m) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...31 50 16 140 68 120 4.5 7.5 5310 890 130 6010 570 1140 Max. Units Conditions --- V VGS = 0V, ID =...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    IRF460

SEME-LAB[Seme LAB]
Part No. IRF460
OCR Text ... 300 2.4 -55 to 150 300 V A A V w w/C C STATIC ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated) BVDSS IDSS IGSS VGS(TH) ID(ON) R...31 Min. 500 Typ. Max. Unit V 25 250 100 4 A nA V A 1) Repetitive Rating: Pulse width limited by ...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POwER MOSFETS

File Size 16.77K  /  2 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ... (1.6mm from case ) Units A w w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PC...31 showing the A G integral reverse --- --- -110 p-n junction diode. S --- --- -1.3 V TJ = 25C, IS =...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ... 10 lbf*in (1.1N*m) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...31 A -110 -1.3 110 250 V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junc...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ...66 2.5 1.6 3.5 2.2 -55 to 150 C w A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4 5 SO-8 Top View ...31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N NOTES: 1 . C O N T R O L L IN G D IM E N S IO N ...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...66 2.5 1.6 3.7 2.3 -55 to 150 C w A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4 5 SO-8 Top View ...31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N NOTES: 1 . C O N T R O L L IN G D IM E N S IO N ...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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