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vsd Datasheet PDF File

For vsd Found Datasheets File :: 23856 Search Time::2.719ms
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				Infineon SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	C67078-S1344-A2 BUZ51
OCR Text	... C Values typ. max. Unit ISM vsd trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 6.8 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s ...
Description	N-Channel SIPMOS Power Transistor SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) From old datasheet system
File Size	177.59K / 9 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	C67078-S1341-A3
OCR Text	... C Values typ. max. Unit ISM vsd trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 25 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s ...
Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
File Size	188.05K / 9 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	C67078-S1341-A2
OCR Text	... C Values typ. max. Unit ISM vsd trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 25 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s ...
Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
File Size	192.47K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D1
OCR Text	...ward Turn-On Time * Min vsd trr Qrr ton Typ Max 0.5 0.39 51 48 Units Conditions V Tj = 25C, Is = 1A, VGS =0V Tj = 125C, Is = 1A, VGS =0V ns Tj = 25C, Is = 7.0A, VDS = 16V nC di/dt = 100A/s Intrinsic turn-on time is ne...
Description	MOSFET / SCHOTTKY DIODE
File Size	162.75K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D2
OCR Text	...Charge Forward Turn-On Time Min vsd trr Qrr ton 36 41 Typ Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3A, VGS =0V Tj = 125C, Is = 3A, VGS =0V ns Tj = 25C, Is = 7.0A, VDS = 16V nC di/dt = 100A/s Intrinsic turn-on time is negligible (t...
Description	MOSFET / SCHOTTKY DIODE
File Size	131.40K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF7807VD1
OCR Text	...Charge Forward Turn-On Time Min vsd trr Qrr ton 51 48 Typ Max 0.5 0.39 Units Conditions V Tj = 25C, Is = 1.0A, VGS =0VR Tj = 125C, Is = 1.0A, VGS =0VR ns Tj = 25C, Is = 7.0A, VDS = 16V nC di/dt = 100A/s Intrinsic turn-on time is negligib...
Description	Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管 FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	116.12K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807VD2 IRF7807VD2TR
OCR Text	...Charge Forward Turn-On Time Min vsd trr Qrr ton 36 41 Typ Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3.0A, VGS =0VR Tj = 125C, Is = 3.0A, VGS =0VR ns Tj = 25C, Is = 7.0A, VDS = 16V nC di/dt = 100A/s Intrinsic turn-on time is negligi...
Description	30V FETKY - MOSFET and Schottky Diode in a SO-8 package FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	113.54K / 9 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	C67078-S1331-A3 BUZ12AL
OCR Text	...nverse diode forward voltage vsd trr Qrr VGS = 0 V, IF = 84 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 12 A...
Description	From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
File Size	118.54K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text	... Schotkky) Notes: * Min vsd Qrr Qrr(s) Typ Max 1.2 80 50 Min Typ Max Units 1.2 80 50 V nC Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300 s; duty cycle 2%. When mounted on 1 inch sq...
Description	8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET Chip-Set for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	238.61K / 8 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	C67078-S1331-A3 BUZ12A
OCR Text	...nverse diode forward voltage vsd trr Qrr VGS = 0 V, IF = 84 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 12 A...
Description	From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS功率晶体管（N通道增强模式雪崩级）
File Size	120.68K / 9 Page	View it Online	Download Datasheet

For vsd Found Datasheets File :: 23856 Search Time::2.719ms
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