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				Motorola Inc MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
Part No.	BD243B ON0193 BD244C BD243C BD244B
OCR Text	...ing 80 Symbol TJ, Tstg VCEO VCB veb PD IC IB Symbol RJC BD243B BD244B 80 80 - 65 to + 150 65 0.52 2.0 5.0 6 10 1.92 Max BD243C BD244C 100 100 Watts W/_C (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Preferred dev...
Description	Complementary Silicon Plastic Power Transistors From old datasheet system 6 AMPERE POWER TRANSISTORS POWER TRANSISTORS COMPLEMENTARY SILICON
File Size	140.50K / 6 Page	View it Online	Download Datasheet

				PROMAX-JOHNTON List of Unclassifed Manufacturers ETC[ETC] ITT, Corp.
Part No.	PJ2N9013 PJ2N9013CT PJ2N9013CX
OCR Text	... =100A , IC=0 VCB= 25V , IE = 0 veb= 3V , IC=0 veb= 1V, IC =50mA veb= 1V, IC =500mA IC= 500 mA , IB=50mA IC= 500mA , IB=50mA VCE =1V, Ic =10mA Min 40 20 5 Typ Max Unit V V V 100 100 64 40 120 90 0.16 0.91 0.6 0.67 0.6 1.2 0...
Description	40V; 500mA NPN epitaxial silicon transistor NPN Epitaxial Silicon Transistor npn型外延硅晶体
File Size	157.58K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
Part No.	QM75DY-24B
OCR Text	...rwise noted) Conditions IC=1A, veb=2V veb=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 75 75 500 4 750 -40~+150 -40~+125 Charged part to case, A...
Description	MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
File Size	94.22K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM75DY-24
OCR Text	...rwise noted) Conditions IC=1A, veb=2V veb=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 75 75 500 4 750 -40~+150 -40~+125 Charged part to case, A...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	74.51K / 5 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	DMMT3904W2
OCR Text	...= 0 IE = 10A, IC = 0 VCE = 30V, veb(OFF) = 3.0V VCE = 30V, veb(OFF) = 3.0V IC = 100A, IC = 1.0mA, IC = 10mA, IC = 50mA, IC = 100mA, VCE = VCE = VCE = VCE = VCE = 1.0V 1.0V 1.0V 1.0V 1.0V DC Current Gain (Note 7) hFE Collector-E...
Description	MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
File Size	133.58K / 4 Page	View it Online	Download Datasheet

				Diodes
Part No.	ASMCC0096
OCR Text	... 0 IE = 10mA, IC = 0 VCE = 30V, veb(OFF) = 3.0V VCE = 30V, veb(OFF) = 3.0V DC Current Gain hFE 3/4 IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V Collector-E...
Description	Complex Arrays
File Size	71.34K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM75DY-2HB
OCR Text	...rwise noted) Conditions IC=1A, veb=2V veb=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 75 75 500 4 750 -40~+150 -40~+125 Charged part to case, A...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	76.06K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM75DY-2H
OCR Text	...rwise noted) Conditions IC=1A, veb=2V veb=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 75 75 500 4 750 -40~+150 -40~+125 Charged part to case, A...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	81.92K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM75DY-HB
OCR Text	...rwise noted) Conditions IC=1A, veb=2V veb=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 75 75 350 4.5 750 -40~+150 -40~+125 Charged part to case, AC...
Description	75 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR HIGH POWER SWITCHING USE INSULATED TYPE
File Size	84.32K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM75DY-H
OCR Text	...rwise noted) Conditions IC=1A, veb=2V veb=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 75 75 350 4.5 750 -40~+150 -40~+125 Charged part to case, AC...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	78.28K / 5 Page	View it Online	Download Datasheet

For veb Found Datasheets File :: 22190 Search Time::1.86ms
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