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Infineon Technologies
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Part No. |
K25T120
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OCR Text |
...* * * *
Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D Short circuit withstand time - 10s Designed for : - Frequen...1V
20ms DC 10V 100V 1000V
100Hz
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY Figure 1.... |
Description |
Search --To IKW25T120
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File Size |
923.28K /
16 Page |
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Panasonic
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Part No. |
UNA0230
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OCR Text |
...25C)
Symbol VCBO VCEO ICBO hFE VCE(sat) fT Cob VF REB Conditions (NPN) IC = 10A, IE = 0 (PNP) IC = -10A, IE = 0 (NPN) IC = 1mA, IB = 0 (PNP...1V, IC = 0.5A* (PNP) VCE = -1V, IC = - 0.5A* (NPN) IC = 2A, IB = 50mA* (PNP) IC = -2A, IB = -50mA* (... |
Description |
Composite Device - Small Signal Transistor Arrays
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File Size |
55.43K /
4 Page |
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Panasonic
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Part No. |
UNA0228 UNA0228UN228
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OCR Text |
...
Symbol VCBO VCEO VEBO ICBO hFE VCE(sat) fT Cob VF Conditions (NPN) IC = 10A, IE = 0 (PNP) IC = -10A, IE = 0 (NPN) IC = 1mA, IB = 0 (PNP) IC...1V, IC = 0.5A* (PNP) VCE = -1V, IC = 0.5A* (NPN) IC = 1A, IB = 30mA* (PNP) IC = -1A, IB = -30mA* (NP... |
Description |
复合设备-小信号晶体管阵列 Composite Device - Small Signal Transistor Arrays
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File Size |
56.94K /
4 Page |
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Panasonic
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Part No. |
UNA0222
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OCR Text |
...ight Low power consumption (low VCE(sat) transistor used) Low-voltage drive Transistors with built-in resistor with 6 elements (SO-14)
Un...1V, IC = 0.5A* (PNP) VCE = -1V, IC = - 0.5A* (NPN) IC = 2A, IB = 50mA* (PNP) IC = -2A, IB = -50mA* (... |
Description |
Composite Device - Small Signal Transistor Arrays
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File Size |
55.71K /
4 Page |
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it Online |
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Panasonic
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Part No. |
UNA0216 UNA0216UN216
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OCR Text |
...ight Low power consumption (low VCE(sat) transistor used) Low-voltage drive With 6 elements incorporated. (SO-14)
Unit: mm
7
0.40.1...1V, IC = 0.5A* (PNP) VCE = -1V, IC = - 0.5A* (NPN) IC = 2A, IB = 50mA (PNP) IC = -2A, IB = -50mA (NP... |
Description |
300KHZ -5V/ADJ INVERTING, NEGATIVE OUTPUT CURRENT MODE PWM REGULATOR Composite Device - Small Signal Transistor Arrays
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File Size |
57.71K /
4 Page |
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Infineon
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Part No. |
SGW02N120
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OCR Text |
...ax Turn off safe operating area VCE 1200V, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25, start...1V 10V 100V 1000V
150s
4A
0.1A
2A
Ic
0.01A
0A 10Hz
100Hz
1kHz
10kHz
1... |
Description |
IGBTs & DuoPacks - 2A 1200V TO247AC IGBT
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File Size |
376.51K /
11 Page |
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it Online |
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Infineon
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Part No. |
ILA03N60 ILB03N60E3045A ILD03N60 ILP03N60
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OCR Text |
...60 Maximum Ratings Parameter
VCE 600V 600V 600V 600V
IC 3.0A 3.0A 3.0A 3.0A
VCE(sat),Tj=25C 2.9V 2.9V 2.9V 2.9V
Tj,max 150C 150C...1V 10V 100V 1000V
IC, COLLECTOR CURRENT
15s 1A 50s
200s 0.1A 1ms DC
0.01A 1V 10V 100V 10... |
Description |
IGBTs & DuoPacks - 3A / 600V LightMOS in TO220 FullPak IGBTs & DuoPacks - 3A / 600V LightMOS in TO263 IGBTs & DuoPacks - 3A / 600V LightMOS in DPak
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File Size |
310.73K /
15 Page |
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SANYO
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Part No. |
EC3H09B
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OCR Text |
...-off frequency : fT=6.5GHz typ (VCE=1V). 2183 : fT=11.2GHz typ (VCE=3V). Low operating voltage. Ultraminiature (1006 size) and thin (0.5mm) leadless package.
0.25
[EC3H09B]
0.35 0.2 0.15 0.05 1 0.15 2
0.65
0.05
0.4
3 0.5
... |
Description |
BJT Ultrahigh-Frequency Transistors
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File Size |
37.90K /
7 Page |
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SANYO
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Part No. |
EC3H08B
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OCR Text |
...toff frequency : fT=9.0GHz typ (VCE=1V). 2183 : fT=11.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). Ultraminiature (1006 size) and thin (0.5mm) leadless package.
0.65
[EC3H08B]
0.35 0.2 0.15 0.05 1 0.... |
Description |
Ultrahigh-Frequency Transistors
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File Size |
38.42K /
7 Page |
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it Online |
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Price and Availability
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