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Renesas Electronics Corporation |
Part No. |
RJP60V0DPM-80#T2
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Description |
IGBT for Inverter Applications, TO-3PF, /Tube
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Tech specs |
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Official Product Page
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Samsung Electronic Samsung Semiconductor Co., Ltd. Data Device, Corp. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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Part No. |
K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF750 K4M28163PF-BG750
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Description |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54
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File Size |
111.60K /
12 Page |
View
it Online |
Download Datasheet |
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4S51323PF-MEF90 K4S51323PF-MEF75 K4S51323P K4S51323PF-MEF1L K4S51323PF-MF750JR K4S51323PF-EF750 K4S51323PF-MF1L0 K4S51323PF-EF900
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Description |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 LEAD FREE, FBGA-90 16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 FBGA-90 4M x 32Bit x 4 Banks Mobile-SDRAM From old datasheet system
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File Size |
139.48K /
12 Page |
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it Online |
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ON Semiconductor
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Part No. |
NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G
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Description |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
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File Size |
89.62K /
7 Page |
View
it Online |
Download Datasheet |
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Bom2Buy.com
Price and Availability
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