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  silicon power ldmos fet Datasheet PDF File

For silicon power ldmos fet Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

    NXP Semiconductors N.V.
Part No. BLF871S112 BLF871-15
Description A 100 W ldmos RF power transistor for broadcast transmitter applications and industrial applications.
UHF power ldmos transistor

File Size 206.41K  /  19 Page

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    NXP Semiconductors N.V.
Part No. BLF6G22S-45112
Description Product description45 W ldmos power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
power ldmos transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;

File Size 59.48K  /  10 Page

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    NXP Semiconductors N.V.
Part No. BLF578XR
Description Product descriptionA 1200 W ldmos power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
power ldmos transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;

File Size 67.42K  /  8 Page

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    0809LD30

Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 0809LD30
Description Compant High-Insulation power Relay, Polarized, 10A 30瓦,28V的,1 GHz的ldmos的场效应
30 Watt / 28V / 1 Ghz ldmos fet
30 WATT 28V 1 GHz ldmos fet
30 WATT, 28V, 1 GHz ldmos fet

File Size 16.67K  /  1 Page

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    MW4IC001MR4 MW4IC001MR406

Freescale Semiconductor, Inc
MOTOROLA
Part No. MW4IC001MR4 MW4IC001MR406
Description RF ldmos Wideband Integrated power Amplifier
800??170 MHz, 900 mW, 28 V W??DMA RF ldmos Wideband Integrated power Amplifier

File Size 602.46K  /  16 Page

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    LP601

Polyfet RF Devices
Part No. LP601
Description silicon GATE ENHANCEMENT MODE RF power ldmos TRANSISTOR 7.0 Watts Single Ended Package Style AP
   silicon GATE ENHANCEMENT MODE RF power ldmos TRANSISTOR 7.0 Watts Single Ended Package Style AP

File Size 47.88K  /  2 Page

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    NE5531079A-A NE5531079A-T1-A NE5531079A-T1A

Duracell
Renesas Electronics Corporation
Part No. NE5531079A-A NE5531079A-T1-A NE5531079A-T1A
Description UHF BAND, Si, N-CHANNEL, RF power, MOSfet LEAD FREE, 79A, 4 PIN
7.5 V OPERATION silicon RF power ldmos fet FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS

File Size 230.01K  /  11 Page

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    0809LD30P

Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 0809LD30P
Description Compant High-Insulation power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz ldmos fet
30 WATT 28V 1 GHz ldmos fet
30 WATT, 28V, 1 GHz ldmos fet

File Size 15.67K  /  1 Page

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    NXP Semiconductors N.V.
Part No. BLS7G2325L-105 BLS7G2325L-105-15
Description power ldmos transistor BLS7G2325L-105<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
   power ldmos transistor

File Size 273.08K  /  9 Page

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Renesas Electronics Corporation
Part No. NE55410GR-T3-AZ
Description 2 CHANNEL, S BAND, Si, N-CHANNEL, RF power, MOSfet
N-CHANNEL silicon power ldmos fet FOR 2 W 10 W VHF to L-BAND SINGLE-END power AMPLIFIER

File Size 307.65K  /  15 Page

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