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  silicon n-channel dual gate mo Datasheet PDF File

For silicon n-channel dual gate mo Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

    BF991 BF991-2015

Quanzhou Jinmei Electronic ...
NXP Semiconductors
Part No. BF991 BF991-2015
Description    n-channel dual-gate moS-FET
n-channel dual-gate moSFET

File Size 218.89K  /  7 Page

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    NXP Semiconductors N.V.
Philips
Part No. HEC4002BT HEC4002BT112
Description dual 4-input NOR gate; Package: SOT108-1 (SO14); Container: Tube 4000/14000/40000 SERIES, dual 4-INPUT NOR gate, PDSO14
HEF4002B gates; dual 4-input NOR gate

File Size 23.09K  /  3 Page

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    ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
Part No. STS8DNF3LL
Description dual n-channel 30V - 0.017 OHM - 8A SO-8 LOW gate CHARGE STRIPFET II POWER moSFET
dual n-channel 30V - 0.017 ohm - 8A SO-8 LOW gate CHARGE STripFET II POWER moSFET
dual n-channel 30V - 0.017 ohm - 8A SO-8 LOW gate CHARGE STripFET⑩ II POWER moSFET
dual n-channel 30V - 0.017 ohm - 8A SO-8 LOW gate CHARGE STripFETII POWER moSFET 双N沟道30V 0.017欧姆- 8A条的SO - 8低栅极电荷STripFET⑩二功率moSFET

File Size 268.76K  /  8 Page

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    NTE455

NTE Electronics
Part No. NTE455
Description N−Channel silicon dualgate moS Field Effect Transistor

File Size 75.46K  /  2 Page

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    MGP7N60ED-D

ON Semiconductor
Part No. MGP7N60ED-D
Description Insulated gate Bipolar Transistor with Anti-Parallel Diode n-channel Enhancement-mode silicon gate

File Size 120.86K  /  6 Page

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    MGP4N60ED-D

ON Semiconductor
Part No. MGP4N60ED-D
Description Insulated gate Bipolar Transistor with Anti-Parallel Diode n-channel Enhancement-mode silicon gate

File Size 122.50K  /  6 Page

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    MGP11N60ED-D

ON Semiconductor
Part No. MGP11N60ED-D
Description Insulated gate Bipolar Transistor with Anti-Parallel Diode n-channel Enhancement-mode silicon gate

File Size 122.69K  /  6 Page

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    MGY25N120D-D

ON Semiconductor
Part No. MGY25N120D-D
Description Insulated gate Bipolar Transistor with Anti-Parallel Diode n-channel Enhancement-mode silicon gate

File Size 143.49K  /  6 Page

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    MGW12N120D-D

ON Semiconductor
Part No. MGW12N120D-D
Description Insulated gate Bipolar Transistor with Anti-Parallel Diode n-channel Enhancement-mode silicon gate

File Size 143.47K  /  6 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. GT40G121
Description Insulated gate Bipolar Transistor silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated gate Bipolar Transistor silicon N Channel IGBT

File Size 139.45K  /  5 Page

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