scr vdrm 50 v pdf Datasheet P9 Description --- IC-ON-LINE


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scr vdrm 50 v Datasheet PDF File

For scr vdrm 50 v Found Datasheets File :: 103+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 |

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23-E Q62901-B1 ACY23
Description	Triac; Thyristor Type:Standard; Peak Repetitive Off-State voltage, vdrm:1000v; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入 Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(Av):15.9A; Forward Surge Current Max, Ifsm:350A; Forward voltage:1.1v; Forward voltage Max, vF:1.1v RoHS Compliant: Yes PNP TRANSISTORS FOR AF INPUT STAGES
File Size	207.85K / 6 Page	View it Online	Download Datasheet

				Microchip Technology, Inc. Electronic Theatre Controls, Inc.
Part No.	STK13C68-C25 STK13C68-5S25 STK13C68-5S45 STK13C68-5S35 STK13C68-S30I STK13C68-S35 STK13C68-5S35I STK13C68-S25 STK13C68-S45 STK13C68-S35I STK13C68-5S30I STK13C68-5S25I STK13C68-S45I STK13C68-5S45I STK13C68-S25I STK13C68-P30I STK13C68-5P45 STK13C68-5P25I
Description	FUSE 5A SLO-BLO PICO scr Thyristor; scr Type:Sensitive Gate; Peak Repetitive Off-State voltage, vdrm:200v; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:30A; Gate Trigger Current Max, Igt:200uA scr Thyristor; scr Type:Sensitive Gate; Peak Repetitive Off-State voltage, vdrm:200v; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:30A; Gate Trigger Current Max, Igt:50uA PC Board Fuse; Current Rating:250mA; voltage Rating:125v; Fuse Terminals:SMT Caps; Body Material:Ceramic; Fuse Size/Group:6.10 x 2.69 x 2.69mm; Fuse Type:very Fast Acting; Leaded Process Compatible:No PC Board Fuse; Current Rating:500mA; voltage Rating:125v; Fuse Terminals:SMT Caps; Body Material:Ceramic; Fuse Size/Group:6.10 x 2.69 x 2.69mm; Fuse Type:very Fast Acting; Leaded Process Compatible:No PC Board Fuse; Current Rating:500mA; voltage Rating:125v; Fuse Terminals:SMT Caps; Body Material:Ceramic; Fuse Size/Group:6.10 x 2.69 x 2.69mm; Fuse Type:Time Delay; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No PC Board Fuse; Current Rating:375mA; voltage Rating:125v; Fuse Terminals:SMT Caps; Body Material:Ceramic; Fuse Size/Group:6.10 x 2.69 x 2.69mm; Fuse Type:Time Delay; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No Cartridge Fuse; Current Rating:0.062A; voltage Rating:125v; Fuse Type:very Fast Acting; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; voltage Rating:125v RoHS Compliant: No NvRAM (EEPROM Based) NvRAM中（EEPROM的基础
File Size	280.13K / 8 Page	View it Online	Download Datasheet

				California Eastern Laboratories
Part No.	NX8341UH-AZ NX8341UN-AZ
Description	PLIERS, COMBINATION REDLINE 200MMPLIERS, COMBINATION REDLINE 200MM; Jaw type:Combination; Length:200mm; Handle type:High grip; Capacity, cutting hard wire:2.0mm; Capacity, jaw max:2mm; Joint Construction:lap; Length, jaw:44mm; Width, NECs 1310 nm AlGalnAs MQW-DFB TOSA FOR 10 Gb/s APPLICATION Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State voltage, vdrm:1000v; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
File Size	302.83K / 7 Page	View it Online	Download Datasheet

				Hirose Electric USA, INC. HIROSE ELECTRIC Co., Ltd. HIROSE[Hirose Electric]
Part No.	HD-0125M3-GH HD-0155M3-IH HD-0195M3-DH HD-0195M3-DH-1 HD-2500M3-BH HD-0300M3-FH-I HD-0313M3-FH HD-0053M3-IH HD-0750M3-GH HD-0900M3-CH HD-0900M3-CH-1 HD-0900M3-CH-2 HD-1700M3-FH HD-1800M3-CH HD-1900M3-CH HD-2400M3-BH HD-0195M3-DH-I HD-1500M3-GH HD-3200M3-BH HD-2100M3-CH HD-0660M3-GH-I HD-3900M3-BH HD-0700M3-FH HD-0430M3-CH HD-0660M3-GH-1 HD-0900M3-CH-I HD-0070M3-GH HD-0300M3-FH-1 HD-6150M3-AH HD-0620M3-EH HD-02103AST HD-0300M3-FH HD-0660M3-GH
Description	Stick Coupler 3 dB 90° Card Couplers 3 dB 90∑ Card Couplers 3 dB 90 Card Couplers scr-600vRM 10A Bridge Rectifier; Repetitive Reverse voltage Max, vrrm:100v; Package/Case:TO-202; Current Rating:4A; Mounting Type:Through Hole 3 dB 90Card Couplers 3分贝90Σ卡耦合 scr Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State voltage, vdrm:100v; On-State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:8A; Gate Trigger Current Max, Igt:200uA 3分贝90Σ卡耦合 3 dB 90??Card Couplers 3 dB 90?Card Couplers
File Size	580.68K / 9 Page	View it Online	Download Datasheet

				Diotec Elektronische DIOTEC[Diotec Semiconductor] Diotec Semiconductor AG http://
Part No.	ZMY20G ZMY22G ZMY24G ZMY27G ZMY4.3G ZMY4.7G ZMY43G ZMY47G ZMY3.0G ZMY3.3G ZMY3.6G ZMY3.9G ZMY75G ZMY5.1G ZMY16G ZMY56G ZMY5.6G ZMY100G ZMY10G ZMY36G ZMY18G ZMY62G ZMY68G ZMY12G ZMY82G ZMY91G ZMY39G ZMY51G ZMY30G ZMY33G ZMY13G ZMY11G ZMY15G ZMY1G ZMY6.2G ZMY6.8G ZMY7.5G ZMY8.2G ZMY9.1G
Description	Surface mount Silicon-Zener Diodes (planar technology) Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:23-21 1302 RECALIBRATED BY NEWARK INONE SERvICES Triac; Thyristor Type:Standard; Peak Repetitive Off-State voltage, vdrm:600v; On State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:25mA; Current, It av:16A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes surface mount silicon Zener diodes 5.1 v, 1 W, SILICON, UNIDIRECTIONAL vOLTAGE REGULATOR DIODE, DO-213AB surface mount silicon Zener diodes 硅表面贴装齐纳二极管 surface mount silicon Zener diodes 9.05 v, 1 W, SILICON, UNIDIRECTIONAL vOLTAGE REGULATOR DIODE, DO-213AB
File Size	52.55K / 2 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-B257 BBY34D Q62702-B194 BBY34C
Description	Silicon Tuning varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 v) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五） Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State voltage, vdrm:600v; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes Silicon Tuning varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 v) Silicon Tuning varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 v)
File Size	20.70K / 2 Page	View it Online	Download Datasheet

				意法半导 EEPROM STMicroelectronics N.v.
Part No.	M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
Description	16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes CRYSTAL 9.84375MHZ 10PF SMD UHF power transistor NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; G_UM: 7 dB; G_UM @ f1: 7 dB; I_C: 250 mA; P_tot: 250 mW; Polarity: NPN ; vCEO max: 8 v CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD MMIC variable gain amplifier AB 3C 3#12 SKT RECP Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator Schottky barrier double diodes - C_d max.: 100@vR=4v pF; Configuration: dual c.a. ; I_F: 1 A; I_FSM max: 10 A; I_R max: 1@vR=25v mA; v_Fmax: 450@IF=1A mv; v_R: 25 v XTL, OSC, 50.000 MHZ, 100PPM Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Schottky barrier diode - C_d max.: 10@vR=1v pF; Configuration: single ; I_F max: 200 mA; I_FSM max: 300 A; I_R max: 2.3@vR=25vA; v_Fmax: 400@IF=10mA mv; v_R max: 30 v CONNECTOR ACCESSORY PNP/PNP matched double transistors IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP AB 17C 17#16 PIN RECP 45 v, 100 mA NPN general-purpose transistors NPN/PNP general purpose transistor - Description: Matched Pair IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015 CRYSTAL 4.897MHZ 20PF SMD Thyristors - I_GT: 32 mA; I_T (R_MS): 20 A; v_DRM: 650 v Thyristors - I_GT: 32 mA; I_T (R_MS): 20 A; v_DRM: 800 v POT 200 OHM 3/4 RECT CERM MT Thyristors logic level for RCD/GFI/LCCB applications - I_GT: 0.2 (min 0.02) mA; I_T (R_MS): 0.8 A; v_DRM: 500 v Thyristors logic level for RCD/GFI/LCCB applications - I_GT: 0.2 (min 0.02) mA; I_T (R_MS): 0.8 A; v_DRM: 600 v Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes PowerMOS transistor Logic level TOPFET - @ v_IS: 5 v; I_D: 15 A; Number of pins: 3 ; R_DS(on): 0.125 mOhm; v_DSmax: 50 v Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; volume:1gallon (US) RoHS Compliant: Yes CRYSTAL 6.7458MHZ 20PF SMD Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes RES ARRAY 24 OHM 8TRM 4RES SMD SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kv/us; Package: SOIC-W; No of Pins: 8; Container: Box NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300 High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@vR=80v nA; IFRM: 450 mA; trr max: 4 ns; vFmax: 1@IF=50mA mv; vR max: 100 v Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; vdrm: 500 v Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@vR=75v nA; IFRM: 500 mA; trr max: 3000 ns; vFmax: 1@IF=10mA mv; vR max: 75 v Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@vR=125v nA; IFRM: 625 mA; trr max: 1500 ns; vFmax: 1@IF=100mA mv; vR max: 125 v NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; vCE: 10 v; vThyristors - IGT: 32 mA; IT (RMS): 20 A; vdrm: 650 v NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; vCEO max: 8 v Schottky barrier double diodes - Cd max.: 100@vR=4v pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@vR=25v mA; vFmax: 450@IF=1A mv; vR: 25 v Schottky barrier diode - Cd max.: 10@vR=1v pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@vR=25vA; vFmax: 400@IF=10mA mv; vR max: 30 v Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; vdrm: 500 v Thyristors - IGT: 32 mA; IT (RMS): 20 A; vdrm: 800 v Schottky barrier double diodes - Cd max.: 100@vR=4v pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@vR=25v mA; vFmax: 450@IF=1A mv; vR: 25 v Schottky barrier diode - Cd max.: 90@vR=0v pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@vR=35v mA; vFmax: 550@IF=0.5A mv; vR: 40 v AB 4C 4#12 PIN PLUG Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz Silicon PIN diode NPN 14 GHz wideband transistor PowerMOS transistor Logic level TOPFET - @ vIS: 5 v; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; vDSmax: 50 v HDWR PLATE SER 3 FRNT MNT BLK OSCILLATORS 50PPM 0 70 3.3v 4 33.000MHZ TS 5X7MM 4PAD SMD Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; vdrm: 600 v Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; vdrm: 400 v; vRRM: 400 v Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; vdrm: 200 v Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; vdrm: 400 v 16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM 8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM RECTIFIER SBR DUAL 40A 40v 280A-ifsm 530mv-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
File Size	144.80K / 25 Page	View it Online	Download Datasheet

				Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] MAXIM - Dallas Semiconductor
Part No.	MAX821-MAX822 MAX822LUS-T MAX822MUS-T MAX822RUS-T MAX822SUS-T MAX822TUS-T MAX821PUS-T MAX821MUS-T MAX821 MAX821-BMAX822 MAX821LUS-T MAX821RUS-T MAX821SUS-T MAX821TUS-T MAX821UUS-T MAX8211ETY
Description	4-Pin レP voltage Monitors with Pin-Selectable Power-On Reset Timeout Delay 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4 scr Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State voltage, vdrm:400v; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes 4-PIN ヌP vOLTAGE MONITORS WITH PIN-SELECTABLE POWER-ON RESET TIMEOUT DELAY 4-Pin P voltage Monitors with Pin-Selectable Power-On Reset Timeout Delay 4-Pin ?? voltage Monitors with Pin-Selectable Power-On Reset Timeout Delay 4-Pin μP voltage Monitors with Pin-Selectable Power-On Reset Timeout Delay Microprocessor voltage Monitors with Programmable voltage Detection
File Size	75.94K / 8 Page	View it Online	Download Datasheet

				Micro Commercial Components Corp. MCC[Micro Commercial Components] Micro Commercial Compon...
Part No.	HD10 HD01 HD02 HD08 HD04 HD06
Description	TRIAC-400v 25 AMP TRIAC,800v v(DRM),25A I(T)RMS,TO-220 RoHS Compliant: Yes Bridge Rectifier; Repetitive Reverse voltage Max, vrrm:200v; Package/Case:TO-126; Current Rating:4A; Mounting Type:Through Hole Triac; Thyristor Type:Standard; Peak Repetitive Off-State voltage, vdrm:800v; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:25mA; Package/Case:TO-220AB RoHS Compliant: Yes Triac; Package/Case:TO-48; Current, It av:40A; Mounting Type:Through Hole; Repetitive Reverse voltage Max, vrrm:400v; Current Rating:40A; voltage 0.8 Amp Single Phase Glass Passivated Bridge Rectifier 100 to 1000 volts
File Size	91.94K / 2 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
Part No.	M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
Description	40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC 64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State voltage, vdrm:400v; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
File Size	325.20K / 19 Page	View it Online	Download Datasheet

For scr vdrm 50 v Found Datasheets File :: 103+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 |

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