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For polysilicon Found Datasheets File :: 1557 Search Time::10.532ms
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				XILINX INC Xilinx, Inc. XILINX[Xilinx, Inc]
Part No.	XC4000XL XC4000XLA XC4000XV XC40110XV XC4036XLA XC4013XLA XC4044XLA XC4044XLA-08HQ240I XC4028XLA XC4062XLA XC4052XLA XC4020XLA XC40250XV XC4085XLA XC4085XLA-09HQ240C XC4000XLA_XV DS015 XC4036XL-09BG352C XC40150XV XC40200XV XC4020XLA-09PQG240C XC4085XLA-09HQ240I XC4036XLA-08BG352C XC4036XLA-09BG352I XC4013XLA-09PQ208I XC4052XLA-08BG352C XC4036XLA-09HQ208I XC4036XLA-08HQ208C XC4044XLA-09BG352C XC4036XLA-09BG256C XC4013XLA-09BG256C PG559C
OCR Text	...he lowest layer are 0.25 micron polysilicon MOSFET gates. The excellent planarity of each metal layer is due to the use of "chemical-mechanical polishing" or CMP. In effect, each layer is ground flat before a new layer is added. IOB Enha...
Description	XC4000XLA/XV Field Programmable Gate Arrays FPGA, 1296 CLBS, 22000 GATES, PBGA256 FPGA, 1600 CLBS, 27000 GATES, 227 MHz, PBGA352 36000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 1296 CLBS, 22000 GATES, 263 MHz, PQFP208 36000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 1296 CLBS, 22000 GATES, 227 MHz, PQFP208 52000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 1936 CLBS, 33000 GATES, 263 MHz, PBGA352 13000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 576 CLBS, 10000 GATES, 227 MHz, PQFP208 36000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 1296 CLBS, 22000 GATES, 227 MHz, PBGA352 36000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 1296 CLBS, 22000 GATES, 263 MHz, PBGA352 85000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 3136 CLBS, 55000 GATES, 227 MHz, PQFP240 XC4020XLA-09PQG240C - NOT RECOMMENDED for NEW DESIGN FPGA, 784 CLBS, 13000 GATES, 227 MHz, PQFP240 From old datasheet system Product Specification FPGA, 5184 CLBS, 100000 GATES, 296 MHz, CPGA559
File Size	124.42K / 14 Page	View it Online	Download Datasheet

				http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL-W M5M5V208FP-12L-W M5M5V208FP-70LL-W M5M5V208FP-70L-W M5M5V208FP-85LL-W M5M5V208FP-85L-W M5M5V208KR-10LL-W M5M5V208KR-10L-W M5M5V208KR-12LL-W M5M5V208KR-12L-W M5M5V208KR-70LL-W M5M5V208KR-70L-W M5M5V208KR-85LL-W M5M5V208KR-85L-W M5M5V208KV-10LL-W M5M5V208KV-10L-W M5M5V208KV-12LL-W M5M5V208KV-12L-W M5M5V208KV-70LL-W M5M5V208KV-70L-W M5M5V208KV-85LL-W M5M5V208KV-85L-W M5M5V208RV-10LL-W M5M5V208RV-10L-W M5M5V208RV-12LL-W M5M5V208RV-12L-W M5M5V208RV-70LL-W M5M5V208RV-70L-W M5M5V208RV-85LL-W M5M5V208RV-85L-W M5M5V208VP-10LL-W M5M5V208VP-10L-W M5M5V208VP-12LL-W M5M5V208VP-12L-W M5M5V208VP-70LL-W M5M5V208VP-70L-W M5M5V208VP-85LL-W M5M5V208VP-85L-W M5V208W M5M5V208FP-85-W M5M5V208KR-85-W M5M5V208RV-85-W M5M5V208VP-85-W M5M5V208KV-85-W
OCR Text	...sing high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low power static RAM. The M5M5V208 is designed for memory applica...
Description	From old datasheet system Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
File Size	87.80K / 7 Page	View it Online	Download Datasheet

				http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	M5M5V208FP-10L M5M5V208FP-10LL M5M5V208FP-12L M5M5V208FP-12LL M5M5V208FP-70L M5M5V208FP-70LL M5M5V208FP-85L M5M5V208FP-85LL M5M5V208KR-10L M5M5V208KR-10LL M5M5V208KR-12L M5M5V208KR-12LL M5M5V208KR-70L M5M5V208KR-70LL M5M5V208KR-85L M5M5V208KR-85LL M5M5V208KV-10L M5M5V208KV-10LL M5M5V208KV-12L M5M5V208KV-12LL M5M5V208KV-70L M5M5V208KV-70LL M5M5V208KV-85L M5M5V208KV-85LL M5M5V208RV-10L M5M5V208RV-10LL M5M5V208RV-12L M5M5V208RV-12LL M5M5V208RV-70L M5M5V208RV-70LL M5M5V208RV-85L M5M5V208RV-85LL M5M5V208VP-10L M5M5V208VP-10LL M5M5V208VP-12L M5M5V208VP-12LL M5M5V208VP-70L M5M5V208VP-70LL M5M5V208VP-85L M5M5V208VP-85LL M5V208S
OCR Text	...sing high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low power static RAM. The M5M5V208 is designed for memory applica...
Description	From old datasheet system 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
File Size	75.19K / 7 Page	View it Online	Download Datasheet

				OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
Part No.	MSM51V16400D MSM51V16400DSL MSM51V16400D-50SJ MSM51V16400DSL-70TS-K MSM51V16400D-50TS-K MSM51V16400D-60SJ MSM51V16400D-60TS-K MSM51V16400D-70SJ MSM51V16400D-70TS-K MSM51V16400DSL-50SJ MSM51V16400DSL-50TS-K MSM51V16400DSL-60SJ MSM51V16400DSL-60TS-K MSM51V16400DSL-70SJ
OCR Text	...the device in a quadruple-layer polysilicon/ double-layer metal CMOS process. The MSM51V16400D/DSL is available in a 26/24-pin plastic SOJ or 26/24-pin plastic TSOP. The MSM51V16400DSL (the self-refresh version) is specially designed for lo...
Description	4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 4194304字4位动态随机存储器：快速页面模式型 DRAM / FAST PAGE MODE TYPE
File Size	467.65K / 17 Page	View it Online	Download Datasheet

				OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets] OKI electronic components
Part No.	MSM51V16405D MSM51V16405D-50SJ MSM51V16405D-50TS-K MSM51V16405D-60SJ MSM51V16405D-60TS-K MSM51V16405D-70SJ MSM51V16405D-70TS-K MSM51V16405DSL MSM51V16405DSL-50SJ MSM51V16405DSL-50TS-K MSM51V16405DSL-60SJ MSM51V16405DSL-60TS-K MSM51V16405DSL-70SJ MSM51V16405DSL-70TS-K
OCR Text	...the device in a quadruple-layer polysilicon/ double-layer metal CMOS process. The MSM51V16405D/DSL is available in a 26/24-pin plastic SOJ or 26/24-pin plastic TSOP. The MSM51V16405DSL (the self-refresh version) is specially designed for lo...
Description	4,194,304-Word X 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 4194304字4位动态随机存储器：快速页面模式型与江 TVS 400W 40V UNIDIRECT SMA 4194304字4位动态随机存储器：快速页面模式型与江 4194304-Word X 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
File Size	863.70K / 17 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 IXFT14N100 IXFT15N100
OCR Text	...S (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance - easy to drive and to protect q Fast intrinsic Rectifier Applications q DC-DC converters q Battery charger...
Description	HiPerFET Power MOSFETs 14 A, 1000 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	115.80K / 4 Page	View it Online	Download Datasheet

				InterFET Corporation
Part No.	IXTH15N70
OCR Text	...RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 700 2 4.5 100 TJ ...
Description	N-Channel Enhancement Mode
File Size	34.51K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXTK62N25
OCR Text	...S (on) HDMOSTM process * Rugged polysilicon gate cell structure * International standard package * Fast switching times Applications Symbol Test Conditions (TJ = 25C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V,...
Description	High Current MegaMOSFET High Current MegaMOSFET
File Size	84.40K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXTM24N50 IXTH21N50 IXTM21N50 IXTH24N50
OCR Text	...RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol...
Description	MegaMOSFET
File Size	107.29K / 4 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXTM5N100 IXTM5N100A IXTH5N100 IXTH5N100A
OCR Text	...RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specifi...
Description	Discrete MOSFETs: Standard N-channel Types Standard Power MOSFET
File Size	103.16K / 4 Page	View it Online	Download Datasheet

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