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P6KE500A AOD11S60 C1473 P6KE75CA MB85R BAYP18 WP710 S1A120D0
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    TPCA8121

Toshiba Semiconductor
Part No. TPCA8121
OCR Text ...in package (2) low drain-source on-resistance: r ds(on) = 2.4 m ? (typ.) (v gs = -10 v) (3) low leakage current: i dss = -10 a (max) (v ds = -30 v) (4) enhancement mode: v th = -0.8 to -2.0 v (v ds = -10 v, i d = -1 ma) 3. 3. 3....
Description MOSFETs Silicon P-Channel MOS (U-MOS)

File Size 230.83K  /  9 Page

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    2SB710 2SB710A 2SB0710 2SB0710A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB710 2SB710A 2SB0710 2SB0710A
OCR Text ... 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Product of no-rank is not Rank Q R S No-rank classified and have no hFE1 85 to 17...
Description Silicon PNP epitaxial planar type

File Size 76.25K  /  3 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW7N60
OCR Text ...eatures high ruggedness r ds( on ) (max 1.3 ? )@v gs =10v gate charge (typical 32 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin . this t...
Description N-channel Mosfet

File Size 374.64K  /  5 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW7N60R
OCR Text ... high ruggedness r ds( on ) (max1.25 ? )@v gs =10v gate charge (typical 19 nc) improved dv/dt capability 100% avalanche tested n - channel to - 220 mosfet absolute maximum ratings thermal characteristics...
Description N-channel TO-220 MOSFET

File Size 641.41K  /  5 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW7N60K
OCR Text ... high ruggedness r ds( on ) (max 0.6 ? )@v gs =10v gate charge (typical 21nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced sup...
Description N-channel TO-220F/I-PAK MOSFET

File Size 644.24K  /  6 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW7N60H
OCR Text ... high ruggedness r ds( on ) (max 1.32 ? )@v gs =10v gate charge (typical 28nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vd...
Description N-channel TO-220F MOSFET

File Size 514.39K  /  5 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW7N60D
OCR Text ... high ruggedness r ds( on ) (max 1.2 ? )@v gs =10v gate charge (typical 30 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technolog...
Description N-channel TO-220F MOSFET

File Size 589.48K  /  5 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW50N10
OCR Text ... high ruggedness r ds( on ) (max17 m ? )@v gs =10v gate charge (typical 82 nc) improved dv/dt capability 100% avalanche tested n - channel to - 220 mosfet absolute maximum ratings thermal characteristics...
Description N-channel TO-220 MOSFET

File Size 710.83K  /  5 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Xian Semipower Electron...
Part No. SW12N65B
OCR Text ... high ruggedness r ds( on ) (max 0.85 ? )@v gs =10v gate charge (typical 28 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos techno...
Description nullN-channel TO-220F MOSFET

File Size 375.30K  /  5 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW120N04M
OCR Text ... high ruggedness r ds( on ) (max5 m ? )@v gs =10v gate charge (typical 57 nc) improved dv/dt capability 100% avalanche tested n - channel to - 220 mosfet absolute maximum ratings thermal characteristics ...
Description N-channel TO-220 MOSFET

File Size 735.88K  /  5 Page

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