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mrs Datasheet PDF File

For mrs Found Datasheets File :: 2138 Search Time::1.329ms
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				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronics Inc
Part No.	K4D263238F K4D263238F-QC40 K4D263238F-QC50
OCR Text	...s/outputs * 4 banks operation * mrs cycle with address key programs -. Read latency 3 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave) * Full page burst length for sequential burst type only * Start ad...
Description	1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL 128Mbit DDR SDRAM From old datasheet system
File Size	235.10K / 17 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D263238G-GC36
OCR Text	... cycle (20tCK) between Emrs and mrs during the power-up sequence. Revision 0.3 (June 8, 2004) * Internal only Revision 0.2 (April 22, 2004) * Changed CAS latency of K4D263238G-GC2A from 4tCK to 5tCK * Changed tWR & tWR_A of K4D26323...
Description	128Mbit GDDR SDRAM
File Size	322.51K / 17 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60
OCR Text	...s/outputs * 4 banks operation * mrs cycle with address key programs -. Read latency 3,4 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave) * Full page burst length for sequential burst type only * Start ...
Description	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
File Size	280.12K / 19 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D26323RA-GC36 K4D26323RA-GC
OCR Text	...s/outputs * 4 banks operation * mrs cycle with address key programs -. Read latency 3,4 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave) * Full page burst length for sequential burst type only * Start ...
Description	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
File Size	300.83K / 18 Page	View it Online	Download Datasheet

				INTEGRATED DEVICE TECHNOLOGY INC
Part No.	IDT72T40118L6.7BB IDT72T40108L6.7BBI 72T4098L4BB
OCR Text	... 0 -d n (x40, x20, x10) sren mrs ren rclk oe q 0 -q n (x40, x20, x10) offset register prs fwft sen rt 5995 drw01 bus configuration ow fsel0 fsel1 iw mark sclk rcs jtag control (boundary scan) tck tms tdo tdi trst rsdr wcs erclk eren hs...
Description	128K X 40 OTHER FIFO, 3.8 ns, PBGA208 64K X 40 OTHER FIFO, 3.8 ns, PBGA208 32K X 40 OTHER FIFO, 3.2 ns, PBGA208
File Size	501.75K / 52 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H510438C-LA2 K4H510438C-LB0 K4H510438C-LB3 K4H510438C-LCC K4H510438C-UC K4H510838C-UC
OCR Text	...transition with CK transition * mrs cycle with address key programs -. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM a...
Description	512Mb C-die DDR SDRAM Specification
File Size	209.84K / 23 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4H510438
OCR Text	...transition with CK transition * mrs cycle with address key programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM are sampled at the positive going edge of the...
Description	512Mb B-die DDR SDRAM Specification
File Size	328.94K / 23 Page	View it Online	Download Datasheet

For mrs Found Datasheets File :: 2138 Search Time::1.329ms
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