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  mnos Datasheet PDF File

For mnos Found Datasheets File :: 169    Search Time::4.735ms    
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    R1EX24128ASAS0I R1EX24128ATAS0I

Renesas Electronics Corporation
Part No. R1EX24128ASAS0I R1EX24128ATAS0I
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and low voltage circuitry technology. They also have a 64-byte page programming function to make their write operation faster. Features * * * * Single supply: 1.8 V...
Description Two-wire serial interface 128k EEPROM (16-kword 隆驴 8-bit)
Two-wire serial interface 128k EEPROM (16-kword × 8-bit)

File Size 139.39K  /  24 Page

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    AS58C1001DG-15_883C AS58C1001DG-15_IT AS58C1001DG-15_XT AS58C1001DG-20_883C AS58C1001DG-20_IT AS58C1001DG-20_XT AS58C100

Austin Semiconductor
Part No. AS58C1001DG-15_883C AS58C1001DG-15_IT AS58C1001DG-15_XT AS58C1001DG-20_883C AS58C1001DG-20_IT AS58C1001DG-20_XT AS58C1001SF-20_883C AS58C1001SF-20_IT AS58C1001SF-20_XT AS58C1001SF-25_883C AS58C1001SF-25_IT AS58C1001SF-25_XT AS58C1001DG-25_883C AS58C1001DG-25_IT AS58C1001DG-25_XT AS58C1001SF-15_883C AS58C1001SF-15_IT AS58C1001SF-15_XT AS58C1001F-15_883C AS58C1001F-15_IT AS58C1001F-15_XT AS58C1001F-20_883C AS58C1001F-20_XT AS58C1001DCJ-25_883C AS58C1001F-25_883C AS58C1001F-25_IT AS58C1001F-25_XT
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and circuitry technology and CMOS process and circuitry technology. This device has a 128-Byte Page Programming function to make its erase and write operations faster. ...
Description 128K x 8 EEPROM EEPROM Memory

File Size 339.00K  /  21 Page

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    R1EX24016ATA00A

Renesas Electronics Corporation
Part No. R1EX24016ATA00A
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and low voltage circuitry technology. They also have a 16-byte page programming function to make their write operation faster. Note: Renesas Technology's serial EEPROM ...
Description Two-wire serial interface 16k EEPROM (2-kword 】 8-bit)

File Size 125.41K  /  22 Page

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    HN58X2432SI05 HN58X2432STIE HN58X2464STIE HN58X2464SFPIE HN58X2464SI

Renesas Electronics Corporation
Part No. HN58X2432SI05 HN58X2432STIE HN58X2464STIE HN58X2464SFPIE HN58X2464SI
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and low voltage circuitry technology. They also have a 32-byte page programming function to make their write operation faster. Note: Renesas Technology's serial EEPROM ...
Description Two-wire serial interface 32k EEPROM (4-kword 隆驴 8-bit)/64k EEPROM (8-kword 隆驴 8-bit)
Two-wire serial interface 32k EEPROM (4-kword × 8-bit)/64k EEPROM (8-kword × 8-bit)

File Size 148.81K  /  22 Page

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    R1EX24016ASA00A R1EX24016ATA00A

Renesas Electronics Corporation
Part No. R1EX24016ASA00A R1EX24016ATA00A
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and low voltage circuitry technology. They also have a 16-byte page programming function to make their write operation faster. Note: Renesas Technology's serial EEPROM ...
Description Two-wire serial interface 16k EEPROM (2-kword 隆驴 8-bit)
Two-wire serial interface 16k EEPROM (2-kword × 8-bit)

File Size 129.75K  /  22 Page

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    R1EX24016ASA00I R1EX24016ATA00I

Renesas Electronics Corporation
Part No. R1EX24016ASA00I R1EX24016ATA00I
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and low voltage circuitry technology. They also have a 16-byte page programming function to make their write operation faster. Features * * * * Single supply: 1.8 V...
Description Two-wire serial interface 16k EEPROM (2-kword 隆驴 8-bit)
Two-wire serial interface 16k EEPROM (2-kword × 8-bit)

File Size 129.48K  /  22 Page

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    R1EX24016ASAS0I R1EX24016ATAS0I

Renesas Electronics Corporation
http://
Part No. R1EX24016ASAS0I R1EX24016ATAS0I
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and low voltage circuitry technology. They also have a 16-byte page programming function to make their write operation faster. Features * * * * Single supply: 1.8 V...
Description Two-wire serial interface 16k EEPROM (2-kword 隆驴 8-bit)
Two-wire serial interface 16k EEPROM (2-kword × 8-bit)

File Size 138.06K  /  24 Page

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    R1EX24008ATA00I R1EX24008ASA00I

Renesas Electronics Corporation
Part No. R1EX24008ATA00I R1EX24008ASA00I
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and low voltage circuitry technology. They also have a 16-byte page programming function to make their write operation faster. Features * * * * Single supply: 1.8 V...
Description Two-wire serial interface 8k EEPROM (1-kword 】 8-bit)

File Size 125.55K  /  22 Page

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    R1EX24008ATA00A R1EX24008ASA00A

Renesas Electronics Corporation
Part No. R1EX24008ATA00A R1EX24008ASA00A
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and low voltage circuitry technology. They also have a 16-byte page programming function to make their write operation faster. Note: Renesas Technology's serial EEPROM ...
Description Two-wire serial interface 8k EEPROM (1-kword 】 8-bit)

File Size 125.80K  /  22 Page

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    R1EX24512ASAS0I

Renesas Electronics Corporation
Part No. R1EX24512ASAS0I
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and low voltage circuitry technology. They also have a 128-byte page programming function to make their write operation faster. Features * * * * Single supply: 1.8 ...
Description Two-wire serial interface 512k EEPROM (64-kword 隆驴 8-bit)
Two-wire serial interface 512k EEPROM (64-kword × 8-bit)

File Size 130.25K  /  23 Page

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For mnos Found Datasheets File :: 169    Search Time::4.735ms    
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