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S6494 TDA5100 AP160 RT8205A 1040B B2000 ATS240B OXFW912
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    Diodes Inc.
Diodes, Inc.
Part No. DL4003-13-F DL4004-13-F DL4001-13-F DL4002-13-F DL4005-13-F DL4007-13-F DL4006-13-F
OCR Text ...ctified current @ t t = 75 c i o 1.0 a peak forward surge cur rent 8.3ms single half sine-wave superimposed on rated load i fsm 30 a maximum forward voltage @ i f = 1.0a v f m 1.1 v maximum dc reverse current @ t a = 25 c @rated d...
Description 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE

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    Diodes Inc.
Diodes, Inc.
Part No. DLPT05-7-F
OCR Text ... pk 300 w peak forward voltage (i pp = 1a, tp = 8x20 s) v fp 2.1 v diode peak repetitive reverse voltage v rrm 75 v thermal resistance, ju...f = 1mh z from line to be protected to ground pin. 2. tp = 8x20 s. 3. clamping voltage values...
Description SURFACE MOUNT DATALINE PROTECTION DEVICE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE

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    BAT1000-7-F BAT10001

Diodes Incorporated
Part No. BAT1000-7-F BAT10001
OCR Text ...28 v average rectified current i o 1.0 a non-repetitive peak forwar d surge current 8.3ms single half sine-wave superimposed on rated load ...f ? 225 235 290 340 390 420 475 270 290 340 400 450 500 600 mv i f = 50ma i f = 100ma i f = ...
Description 1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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    Diodes Inc.
Diodes, Inc.
Part No. BAS70DW-05-7-F BAS70DW-04-7-F BAS70DW-06-7-F BAS70TW-7-F BAS70BRW-7-F
OCR Text ...ard continuous current (note 1) i fm 70 ma non-repetitive peak forward surge current @ t < 1.0s i fsm 100 ma power dissipation (note 1) p d ...f top view characteristic symbol min max unit test condition reverse breakdown voltage (note 2) v (b...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS 0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE

File Size 63.21K  /  3 Page

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    Diodes Inc.
Diodes, Inc.
Part No. BAS70-05-7-F BAS70-06-7-F BAS70-04-7-F
OCR Text ...rd continuous current (note 1) i fm 70 ma non-repetitive peak forward surge current @ t 1.0s i fsm 100 ma power dissipation ...f ? 410 1000 mv t p <300s, i f = 1.0ma t p <300s, i f = 15ma reverse current (note 2) i r...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE

File Size 238.29K  /  3 Page

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    Diodes Inc.
Diodes, Inc.
Part No. BAS40DW-05-7-F BAS40DW-04-7-F BAS40DW-06-7-F BAS40TW-7-F
OCR Text ...ard continuous current (note 1) i fm 200 ma non-repetitive peak forward surge current @ t < 1.0s i fsm 600 ma power dissipation (note 1) p d...f characteristic symbol min max unit test condition reverse breakdown voltage (note 2) v (br)r 40 ...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS 0.2 A, 40 V, 4 ELEMENT, SILICON, SIGNAL DIODE

File Size 62.59K  /  3 Page

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    Diodes Inc.
Diodes, Inc.
Part No. BAS40-05-7-F BAS40-7-F BAS40-06-7-F BAS40-04-7-F
OCR Text ...d continuous current (note 1) i fm 200 ma power dissipation (note 1) p d 350 mw forward surge current (note 1) @ t < 1.0s i fsm 60...f ? ? 380 1000 mv t p < 300 s, i f = 1.0ma t p < 300 s, i f = 40ma reverse leakage cu...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE

File Size 209.28K  /  3 Page

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    Cypress Semiconductor Corp.
Part No. DIM200PHM33-F
OCR Text ...es 3300v v ce(sat) * (typ) 3.0v i c (max) 200a i c(pk) (max) 400a * measured at auxiliary terminals. dim200phm33-f000 half bridge igbt modul...f = 200a i f = 200a, t case = 125?c v ce = 25v, v ge = 0v, f = 1mhz v ce = 25v, v ge = 0v, f ...
Description IGBT Modules - Half Bridge IGBT模块-半桥

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