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high power cob high cri led Datasheet PDF File

For high power cob high cri led Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics, Inc.
Part No.	HD1760JL
Description	high Voltage NPN power Transistor for high Definition and New Super-Slim CRT Display high Voltage NPN power Transistor For high Definition CRT Displays
File Size	68.51K / 8 Page	View it Online	Download Datasheet

				CREE power
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

				Rohm CO.,LTD.
Part No.	2SD2318 2SD2318V
Description	high-current gain power Transistor (-60V/ -3A) Low-power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset high-current gain power Transistor(60V/ 3A) high-current gain power Transistor(60V, 3A)
File Size	50.60K / 1 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BTS452R Q67060-S7405 BTS452-R
Description	high Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-TSSOP -55 to 125 智能功率高边开 Smart power high-Side-Switch Smart high Side Switches - 200mΩ, 6-52V 1,8A, P-TO-252-5
File Size	328.56K / 17 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	LD7111 LD7111SERIES
Description	DBS-Band, 1.7KW Klystrons for Communications 17 GHz BAND, 1.7 kW, high EFICIENCY, high power GAIN 17 GHz BAND / 1.7 kW / high EFICIENCY / high power GAIN
File Size	54.93K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MJE18002D2-D
Description	high Speed, high Gain Bipolar NPN power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network power TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS
File Size	54.31K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	BUD44D2-D
Description	high Speed, high Gain Bipolar NPN power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network power TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS
File Size	254.74K / 12 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SJ114
Description	high SPEED power SWITCHING, high FREQUENCY power AMPLIFIER
File Size	114.79K / 3 Page	View it Online	Download Datasheet

				RFMD[RF Micro Devices]
Part No.	TA0012
Description	New high power, high Efficiency HBT GSM power Amplifier
File Size	73.22K / 4 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	TDA4817 TDA4817G Q67000-A8299 Q67000-A8298
Description	PFC IC for high power Factor and Acti... From old datasheet system power Factor Controller IC for high power Factor and Active Harmonic Filtering 0.5 A power FACTOR CONTROLLER, PDIP8 power Factor Controller IC for high power Factor and Active Harmonic Filtering 功率因数控制器IC，用于高功率因数，有源谐波滤
File Size	369.88K / 12 Page	View it Online	Download Datasheet

For high power cob high cri led Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

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