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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4E641611D-TC50 K4E661611D-TC50 K4E641611D-TC60 K4E661611D-TC60
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| OCR Text |
...refresh, ras -only refresh and hidden refresh capabilities. this 4mx16 edo mode dram family is fabricated using samsung s advanced cmos process to realize high band-width, low power consumption and high reliability. ? extended data out ... |
| Description |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
4M X 16 EDO DRAM, 50 ns, PDSO50
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| File Size |
889.14K /
36 Page |
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NEC Corp.
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| Part No. |
UPD4218165L UPD42S18165L
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| OCR Text |
... level input) ras only refresh, hidden refresh m pd4218165l 1,024 cycles/16 ms cas before ras refresh, 1.8 mw ras only refresh, (cmos level input) hidden refresh document no. m10562ej8v0ds00 (8th edition) date published january 1997 n print... |
| Description |
3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE
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| File Size |
317.70K /
48 Page |
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Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
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| Part No. |
MH4V6445BXJJ-5S MH4V6445BXJJ-6
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| OCR Text |
...y-write, cas before ras refresh,hidden refresh capabilities. early-write mode,oe and w to control output buffer impedance. 1 ras access time (max.ns) cas access time (max.ns) address access time (max.ns) cycle time (min.ns) 50 60 13 15 25 3... |
| Description |
HYPER PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM 超页模式268435456位（4194304字，64位）动态随机存储器
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| File Size |
155.86K /
26 Page |
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http://
SIEMENS A G
SIEMENS AG
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| Part No. |
HYB3164165BT-40 HYB3165165BT-40 HYB3166165BT-40 HYB3164165BTL-60 HYB3165165BTL-60 HYB3166165BTL-60
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| OCR Text |
...fresh (cbr), ras -only refresh, hidden refresh and self refresh (l-version only ? 2 cas / 1 we byte control ? 8192 refresh cycles/128 ms , 13 r/ 9c addresses (hyb 3164165bt) 4096 refresh cycles/ 64 ms , 12 r/ 10c addresses (hyb 31651... |
| Description |
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 60 ns, PDSO50
INDUCTOR CHIP .10UH 5% 0805 SMD 4M X 16 EDO DRAM, 60 ns, PDSO50
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 40 ns, PDSO50
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| File Size |
308.53K /
29 Page |
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Micron Technology, Inc.
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| Part No. |
MT8D132G
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| OCR Text |
...nly, cas#-before-ras# (cbr) and hidden ? multiple ras# lines allow x16 or x32 width ? 1,024-cycle refresh distributed across 16ms ? fast page mode (fpm) operating mode or extended data-out (edo) page mode operating mode options marking ? ti... |
| Description |
1Meg x 32 DRAM SIMMs(1M x 32动态RAM（单列直插存储器模块
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| File Size |
309.77K /
21 Page |
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