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				CREE[Cree, Inc]
Part No.	CGH40025F
OCR Text	GaN HEMT Cree's CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applicatio...
Description	25 W, RF Power GaN HEMT
File Size	940.07K / 12 Page	View it Online	Download Datasheet

				CREE[Cree, Inc]
Part No.	CGH40010
OCR Text	GaN HEMT Cree's CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applicatio...
Description	10 W, RF Power GaN HEMT
File Size	760.87K / 12 Page	View it Online	Download Datasheet

				RFHIC
Part No.	RTP26010-10
OCR Text	GaN-SiC Pallet Amplifier Product Features * Doherty amplifier design * GaN on SiC HEMT * Small and light weight * 50 Ohm Input/Output impedance matched * Highly reliable and rugged design * High efficiency * 8W typical PAVG RTP26010-10...
Description	GaN-SiC Pallet Amplifier
File Size	105.96K / 2 Page	View it Online	Download Datasheet

				RFHIC
Part No.	RTP26010-S0
OCR Text	GaN-SiC Pallet Amplifier Product Features * Doherty amplifier design * GaN on SiC HEMT * Small and light weight * 50 Ohm Input/Output impedance matched * Highly reliable and rugged design * High efficiency, High Gain * 8W typical PAVG ...
Description	GaN-SiC Pallet Amplifier
File Size	384.96K / 3 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGF2023-20
OCR Text	GaN on SiC HEMT Key Features * * * * * * * Frequency Range: DC - 18 GHz > 50 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 2 A, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimension...
Description	100 Watt Discrete Power GaN on SiC HEMT
File Size	218.12K / 7 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	D10040200PL1
OCR Text	GaN Pwr Dblr Hybrid D10040200PL1 45-1000MHz GaAs/GaN PWR DBLR HYBRID Package: SOT-115J www.DataSheet4U.com Product Description The...HEMT die and is operated from 45MHz to 1000MHz. It provides high output capability, excellent linear...
Description	45-1000MHz GaAs/GaN PWR DBLR HYBRID
File Size	125.75K / 4 Page	View it Online	Download Datasheet

				RFHIC
Part No.	RUP15100-10
OCR Text	GaN-SiC Broadband Amplifier Product Features * Solid-state linear amplifier design * GaN on SiC HEMT * Small and light weight * Wide Band Operation 500~2500MHz * 50 Ohm Input/Output impedance matched * Highly reliable and rugged design * ...
Description	GaN-SiC Broadband Amplifier
File Size	158.80K / 2 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGF2023-05
OCR Text	GaN on SiC HEMT Key Features * * * * * * * Frequency Range: DC - 18 GHz > 44 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 500 mA, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimens...
Description	25 Watt Discrete Power GaN on SiC HEMT
File Size	215.94K / 7 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGF2023-02
OCR Text	GaN on SiC HEMT Key Features * * * * * * * Frequency Range: DC - 18 GHz > 41 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 250 mA, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimens...
Description	12 Watt Discrete Power GaN on SiC HEMT
File Size	217.58K / 7 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGF2023-01
OCR Text	GaN on SiC HEMT Key Features * * * * * * * Frequency Range: DC - 18 GHz > 38 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 125 mA, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimens...
Description	6 Watt Discrete Power GaN on SiC HEMT
File Size	440.78K / 8 Page	View it Online	Download Datasheet

For gan-hemt Found Datasheets File :: 589 Search Time::0.938ms
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