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  9.7a Datasheet PDF File

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    STD4NC5007 STD4NC50 STD4NC50-1

STMicroelectronics
Part No. STD4NC5007 STD4NC50 STD4NC50-1
OCR Text ...rating area August 2001 1/9 STD4NC50/-1 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistanc...7A, VGS = 0 ISD = 3.7A, di/dt = 100A/s, VDD = 100V, Tj = 150C (see test circuit, Figure 5) 380 2.3 1...
Description N-CHANNEL 500V - 1.3W - 3.7A DPAK/IPAK PowerMesh?II MOSFET
N-CHANNEL 500V - 1.3W - 3.7A DPAK/IPAK PowerMesh⑩II MOSFET

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    Total Power Internation...
TOTAL-POWER[Total Power International]
Part No. SP-320 SP-320-7.5 SP-320-12 SP-320-13.5 SP-320-15 SP-320-24 SP-320-27 SP-320-48 SP-320-5
OCR Text ...fter fault condition is removed 9.4 ~ 10.9V 13.8 ~ 16.2V 15.5 ~ 18.2V 18 ~ 21V 27.6 ~ 32.4V 5.75 ~ 6.75V Protection type : Shut down o/p vol...7A 0 ~ 11.7A 315.9W 200mVp-p 26 ~ 32V 1.0% 0.2% 0.5% SP-320-48 48V 6.7A 0 ~ 6.7A 321.6W 240mVp...
Description 320W Single Output with PFC Function

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    Microsemi
Part No. APT10078BLLG
OCR Text ...p max 2525 430 7595 12 60 98 30 9 355 75 740 95 unit pf nc ns j test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = ...7a i d = 0.5 i d = 7a v gs = 10v 0.02580.107 0.177 0.00295f0.0114f 0.174f power (watts) junction...
Description MOSFET

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    TT electronics Semelab, Ltd.
Part No. IRFNJ9130
OCR Text ........................... .. 28 9. comparison of screening options......................................................... 29 9.1 comparison hi-rel screening options .................................................................... 3...
Description P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS 11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AA

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    2SK3819

Sanyo Semicon Device
Part No. 2SK3819
OCR Text ...4.5 0.2 10.2 4.5 1.3 1.3 9.9 1.5MAX 11.5 8.8 8.8 1.6 20.9 3.0 1.2 (9.4) 11.0 1 0.8 2 3 1.2 0 to 0...7A RL=7.1 VDD=50V Unclamped Inductive Test Circuit 50 RG L D PW=10s D.C.1% VOUT G...
Description General-Purpose Switching Device Applications

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    AO741211

Alpha & Omega Semiconductors
Part No. AO741211
OCR Text ... =5v v gs =4.5v v gs =10v 0 3 6 9 12 15 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.0v 4.5v 10v 3v 2....7a 25 c 125 c rev 2: august 2011 www.aosmd.com page 3 of 5 ao7412 ...
Description 30V N-Channel MOSFET

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    BUR50 BUR5009

Seme LAB
Part No. BUR50 BUR5009
OCR Text ... - emitter case - collector 3 9 . 9 5 ( 1 . 5 7 3 ) m a x . 1 7 . 1 5 ( 0 . 6 7 5 ) 1 6 . 6 4 ( 0 . 6 5 5 ) 3 0 . 4 0 ( 1 . 1 9 7 ) 3 0 . 1 5 ( 1 . 1 8 7 ) 2 6 . 6 7 ( 1 . 0 5 0 ) m a x . 1 1 . 1 8 ( 0 . 4 4 0 ) 1 0 . 6 7 ...
Description SILICON MULTI-EPITAXIAL NPN TRANSISTOR

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    IRFI520NPBF

International Rectifier
Part No. IRFI520NPBF
OCR Text ...esistance (Normalized) I D = 9.5A I D , Drain-to-Source Current (A) 2.5 2.0 TJ = 25C 10 TJ = 175C 1.5 1.0 0.5 ...7A 16 VDS = 80V VDS = 50V VDS = 20V C, Capacitance (pF) 12 8 200 Crss 100 ...
Description HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET

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    TL21W01L

Marktech Corporate
Part No. TL21W01L
OCR Text ...-10-20 rev.1.0 tl21w01-l(t34 7 9. 9. 9. 9. packing packing packing packing 9.1. 9.1. 9.1. 9.1. moisture-proof packing moisture-proof packing moisture-proof packing moisture-proof packing these led devices are packed in an al...
Description LED Lamps InGaN and Phosphor

File Size 286.54K  /  14 Page

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    TL21W01L1

Marktech Corporate
Part No. TL21W01L1
OCR Text ...10-20 rev.1.0 tl21w01-l1(t34 7 9. 9. 9. 9. packing packing packing packing 9.1. 9.1. 9.1. 9.1. moisture-proof packing moisture-proof packing moisture-proof packing moisture-proof packing these led devices are packed in an al...
Description LED Lamps InGaN and Phosphor

File Size 286.42K  /  14 Page

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