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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
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| Part No. |
FS3VS-16A FS100SMJ-03
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| OCR Text |
.................................. 800v rDS (ON) (MAX) ................................................................ 3.3 ID ...................3a
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION SMPS, DC-DC Converter, battery cha... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 3 A, 800 V, 3.3 ohm, N-CHANNEL, Si, POWER, MOSFET
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
44.22K /
4 Page |
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
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| Part No. |
FS7UM-16A
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| OCR Text |
.................................. 800v rDS (ON) (MAX) .............................................................. 1.64 ID ....................3a, VGS = 10V ID = 3a, VGS = 10V ID = 3a, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 800... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
AML31 Series, Solid State Pushbutton, Rectangular, Standard Bezel, Lighted, 1 Incandescent Lamp, DPST NO Form X , Alternate Action, Snap in panel mount 7 A, 800 V, 1.64 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
45.64K /
4 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
RF1S4N100SM RFP4N100 FN2457
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| OCR Text |
...50A VDS = 1000V, VGS = 0V VDS = 800v, VGS = 0V, TC = 150oC MIN 1000 2 VGS = 20V, ID = 3.9A, VDS = 800v (Figure 13) TYP MAX 4 25 100 100 3.50...3a ISD = 3.9A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.8 1000 UNITS V ns
4-529
RFP4N100... |
| Description |
4.3a/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs
4.3a, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
From old datasheet system
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| File Size |
45.56K /
6 Page |
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it Online |
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Fairchild Semiconductor, Corp.
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| Part No. |
SSP3N80A
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| OCR Text |
...e Current : 25 A (Max.) @ VDS = 800v Low RDS(ON) : 3.800 (Typ.)
1 2 3
SSP3N80A
BVDSS = 800 V RDS(on) = 4.8 ID = 3 A
TO-220
1.Gate...3a,VGS=0V TJ=25 C,IF=3a diF/dt=100A/s
4 O
Notes ; 1 O Repetitive Rating : Pulse Width Limited... |
| Description |
ACB 2C 2#16S SKT PLUG 3 A, 800 V, 4.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Advanced Power MOSFET
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| File Size |
360.08K /
7 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
2SC3405
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| OCR Text |
...letor breakdown voltage: v ceo =800v absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 900 v col...3a 10 collector-emitter saturation voltage v ce(sat) i c =0.3a,i b =0.06a 0.5 v base- emitter satura... |
| Description |
Excellent Switching Times tr=1.0ìs (Max.) tf=1.0ìs (Max.) at IC=0.3a
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| File Size |
170.81K /
1 Page |
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ST Microelectronics
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| Part No. |
STF8NK100Z
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| OCR Text |
...apacitance v gs =0v, v ds =0 to 800v 83 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =800v, i d = 6.3a v gs =10v (see figure 17) 73 12 40 102 nc nc nc
2 electrical characteristics stf8nk100z - stp8nk100z... |
| Description |
N-CHANNEL Zener-Protected SuperMESH TM MOSFET
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| File Size |
294.00K /
13 Page |
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it Online |
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Price and Availability
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