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  8-power Datasheet PDF File

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    BCR08AS-8

Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
Mitsubishi Electric Corporation
Part No. BCR08AS-8
OCR Text 8 low power use non-insulated type, planar passivation type ?i t (rms) ..................................................................... 0.8a ?v drm ....................................................................... 400v ?i fgt ! ...
Description LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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    EIC1415A-8

Excelics Semiconductor, Inc.
Part No. EIC1415A-8
OCR Text 8 ISSUED DATE: 09/06/2007 14.40-15.40GHz 8-Watt Internally-Matched Power FET FEATURES * * * * * * * 14.40-15.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 5.5 dB Power Gain at 1d...
Description 14.40-15.40GHz 8-Watt Internally-Matched Power FET

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    EIC1414-8

Excelics Semiconductor, Inc.
Part No. EIC1414-8
OCR Text 8 ISSUED 6/30/2006 14.0-14.5 GHz 8-Watt Internally Matched Power FET FEATURES * * * * * * 14.0- 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compressi...
Description 14.0-14.5 GHz 8-Watt Internally Matched Power FET

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    EIC1011-8

Excelics Semiconductor, Inc.
Part No. EIC1011-8
OCR Text 8 UPDATED 08/21/2007 10.70-11.70GHz 8-Watt Internally Matched Power FET FEATURES * * * * * * * 10.70-11.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Com...
Description 10.70-11.70GHz 8-Watt Internally Matched Power FET

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    EIC1010A-8

Excelics Semiconductor, Inc.
Part No. EIC1010A-8
OCR Text 8 UPDATED 07/20/2005 10.00-10.25 GHz 8-Watt Internally Matched Power FET FEATURES * * * * * * * * 10.00- 10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB...
Description 10.00-10.25 GHz 8-Watt Internally Matched Power FET

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    EIC1010-8

Excelics Semiconductor, Inc.
Part No. EIC1010-8
OCR Text 8 UPDATED 02/15/2005 10.00-10.70 GHz 8-Watt Internally Matched Power FET Excelics EIC1010-8 FEATURES * * * * * * * * 10.00- 10.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 7.0...
Description 10.00-10.70 GHz 8-Watt Internally Matched Power FET

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    Bourns Inc.
Part No. CDNBS08-SLVU2.8-8
OCR Text 8-8 ?low capacitance tvs array features lead free device (rohs compliant*) protects up to 4 i/o ports bidirectional configuration esd pr...power (t p = 8/20 ?) 1 p pp 600 w working voltage v wm 2.8 v breakdown voltage @ 1 ma v br 3.0 v le...
Description CDNBS08-SLVU2.8-8 - Low Capacitance TVS Array

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    Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
Part No. MH16S64AMA-8 MH16S64AMA-12 MH16S64AMA-10
OCR Text 8,-10,-12 1073741824-bit (16777216 - word by 64-bit)synchronousdram mitsubishi lsis ( / 52 ) mitsubishi electric 4. mar.1997 prelimin...power supply fully synchronous operation referenced to clock rising edge burst length- 1/2/4/8(prog...
Description 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
JT 22C 22#22D PIN RECP
JT 22C 22#22D SKT WALL RECP

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    Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
Part No. MH16S64PHB-8 MH16S64PHB-7
OCR Text 8, -10 1073741824-bit (16777216 - word by 64-bit)synchronousdram mitsubishi lsis ( / 55 ) mitsubishi electric 11/jan. /1999 prelimina...power supply fully synchronous operation referenced to clock rising edge burst length- 1/2/4/8/full...
Description 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM 1073741824位(16777216 -文字4位)SynchronousDRAM

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