|
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Part No. |
BCR5KM BCR5
|
OCR Text |
...=125C, VDRM applied Tc=25C, ITM=7a, Instantaneous measurement
@ # !
Limits Min. -- -- -- -- -- -- -- -- 0.2 -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 15 V2 15 V2 15 V2 -- 3.8 50
Unit mA V V V V mA mA mA V C... |
Description |
MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE MEDIUM POWER USE INSULATED TYPE PLANAR PASSIVATION TYPE MEDIUM POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE
|
File Size |
48.26K /
5 Page |
View
it Online |
Download Datasheet |
|
|
|
INTERSIL[Intersil Corporation] HARRIS SEMICONDUCTOR
|
Part No. |
IRFR320 IRFU320 FN2412 IRFR3209A
|
OCR Text |
...0V, (Figure 7) VGS = 20V ID = 1.7a, VGS = 10V, (Figures 8, 9) VDS 10V, ID = 2.0A, (Figure 12) VDD = 200V, ID 3.1A, RGS = 18, RL = 63, VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 3.... |
Description |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA From old datasheet system 3.1A 400v 1.800 Ohm N-Channel Power MOSFETs 3.1A, 400v, 1.800 Ohm, N-Channel Power MOSFETs 0.4A, 400v, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
File Size |
56.71K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
International Rectifier
|
Part No. |
IRHF7310SE
|
OCR Text |
..., ID = 1.0 mA VGS = 12V, ID = 0.7a VGS = 12V, I D = 1.15A VDS = VGS, ID = 1.0 mA VDS > 15V, IDS = 0.7a VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 1.15A VDS = Max. Rating ... |
Description |
TRANSISTOR N-CHANNEL(BVdss=400v, Rds(on)=4.5ohm, Id=1.15A)
|
File Size |
84.65K /
4 Page |
View
it Online |
Download Datasheet |
|
|
|
INFINEON[Infineon Technologies AG]
|
Part No. |
SKB10N60A SKP10N60A SKW10N60A
|
OCR Text |
...E = 15 V T O - 22 0A B T O - 24 7a C V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 wit...400v, VGE = 0/+15V, RG = 25)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,... |
Description |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
|
File Size |
442.88K /
15 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|