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				Diodes Inc. Diodes Incorporated
Part No.	DSS5240T-7
OCR Text	... v , reverse voltage (v) r fig. 7 typical capacitance characteristics 1 10 100 1,000 c a p a c i t a n c e (p f ) c ibo c obo f = 1mhz 01020 30405060 708090100 -i , collector current (ma) c fig. 8 typical gain-bandwidth product vs. colle...
Description	LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
File Size	86.38K / 4 Page	View it Online	Download Datasheet

				Diodes Inc. Diodes Incorporated
Part No.	DSS5160U-7
OCR Text	... v , reverse voltage (v) r fig. 7 typical capacitance characteristics c a p a c i t a n c e (pf) c ibo c obo f = 1mhz dss5160u document number: ds31685 rev. 2 - 2 4 of 5 www.diodes.com march 2009 ? diodes incorporated dss...
Description	LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
File Size	102.81K / 5 Page	View it Online	Download Datasheet

				Diodes Inc.
Part No.	DMP2160U-7
OCR Text	...ard transconductance g fs ? 7 ? s v ds = -10v, i d = -1.5a diode forward voltage (note 4) v sd ? ? -1.0 v v gs = 0v, i s = -1.0a dynamic characteristics (note 5) input capacitance c iss ? 627 ? pf v ds = -10v, v ...
Description
File Size	136.99K / 5 Page	View it Online	Download Datasheet

				Diodes Inc.
Part No.	DMP2130L-7
OCR Text	...conductance (note 6) g fs ? 7.3 ? s v ds = -10v, i d = -3.0a diode forward voltage (note 6) v sd ? 0.79 -1.26 v i s = -1.7a, v gs = 0v maximum body-diode continuous current (note 1) i s ? ? 1.7 a ? dynamic paramete...
Description
File Size	110.22K / 4 Page	View it Online	Download Datasheet

				Diodes Inc. Diodes Incorporated
Part No.	DMN3200U-7
OCR Text	... dmn3200u 0 1 2 3 4 5 6 7 8 9 10 fig. 2 typical transfer characteristics v , gate source voltage (v) gs i, d r ain c u r r en t (a) d 0 1 2 3 4 5 6 7 8 9 10 0.511.522.5 3 t = -55c a t = 25c a t = 85c a t = 150c a v = 5v pulsed ...
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	102.82K / 4 Page	View it Online	Download Datasheet

				Diodes Inc. Diodes Incorporated
Part No.	DMN3150L-7
OCR Text	...l gate charge (4.5v) q g - 3.7 - nc v gs =4.5 v, v ds = 10v, i d = 3.8 a gate-source charge q g s - 0.7 - nc gate-drain charge q g d - 1.1 - nc turn-on delay time t d ( on ) - 1.14 - ns v dd = 15v, v gen = 1...
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 3.8 A, 30 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	139.70K / 5 Page	View it Online	Download Datasheet

				Diodes Inc. Diodes Incorporated
Part No.	DMN2050L-7
OCR Text	... total gate charge q g ? 6.7 ? v ds = 10v, v gs = 4.5v, i d = 5.0a gate-source charge q gs ? 0.8 ? v ds = 10v, v gs = 4.5v, i d = 5.0a gate-drain charge q gd ? 3.0 ? nc v ds = 10v, v gs = 4.5v, i d = 5.0a new...
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	118.94K / 5 Page	View it Online	Download Datasheet

				Diodes Inc.
Part No.	DMMT3906-7-F
OCR Text	...ice packaging shipping dmmt3906-7-f sot-26 3000/tape & reel (note 4 & 6) orderi ng inform ation features epitaxial planar die construction intrinsically matched pnp pair (note 1) small surface mount package 2% h fe matched toleranc...
Description	MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
File Size	149.84K / 4 Page	View it Online	Download Datasheet

				Diodes Inc.
Part No.	DIMD10A-7
OCR Text	... n p u t v o ltag e -2 5 c 5 6 7 75 c 25 c 0 .0 0 1 0 1 2 3 4 0 2 0 3 0 c , c a p a c i t a n c e ( p f ) o b v , r e v e r s e b i a s v o lt a g e ( v ) r f i g . 4 o u t p u t c a p a c i t a n c e 1 0 5 1 5 2 5 i ...
Description	DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT
File Size	198.73K / 4 Page	View it Online	Download Datasheet

				Diodes Inc. Diodes, Inc.
Part No.	DFLS230L-7
OCR Text	... eu directive annex notes 5 and 7 . characteristic symbol min typ max unit test condition reverse breakdown voltage (note 4) v (br)r 30 v i r = 1.0ma forward voltage (note 4) v f 0.310 0.375 0.420 v i f = 1.0a i f = 2.0a leakage...
Description	2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 2 A, 30 V, SILICON, RECTIFIER DIODE
File Size	65.56K / 3 Page	View it Online	Download Datasheet

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