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  61mhz Datasheet PDF File

For 61mhz Found Datasheets File :: 66137    Search Time::1.891ms    
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    DA227 DA227TL

ROHM[Rohm]
Part No. DA227 DA227TL
OCR Text ...me dimension (2) 0.150.05 0.6 0.05 1.250.1 2.10.1 Features 1) Small mold type. (UMD4) 2) High reliability. 0.9MIN. (3)...1MHz VR=6V , IF=5mA , RL=50 1.6 0.05 Rev.A 1/2 DA227 Diodes Electrical characterist...
Description Switching diode

File Size 162.91K  /  3 Page

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    D2253 D2253UK

Seme LAB
Part No. D2253 D2253UK
OCR Text 6 3 4 2 C R A F 5 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 12.5V - 1GHz PUSH-PULL FEATURES I...1MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(s...
Description METAL GATE RF SILICON FET

File Size 19.98K  /  2 Page

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    ROHM[Rohm]
Part No. 2SB1238 2SB1189
OCR Text ...ing 1cm2 or larger. 2SB1238 6.8 2.5 Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SB1...1MHz Conditions Rev.A 4.5 1.6 (2) 1/2 2SB1189 / 2SB1238 Transistors Electrical c...
Description Medium power transistor (-80V, -0.7A)

File Size 58.71K  /  3 Page

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    ROHM[Rohm]
Part No. 2SB1260_1 2SB1181 2SB1241 2SB1260
OCR Text ....1 1.60.1 2SB1181 1.50.3 6.50.2 5.1+0.2 -0.1 C0.5 2.3+0.2 -0.1 0.50.1 0.50.1 1.5 +0.2 -0.1 5.5+0.3 -0.1 4.0 0.3 2.5...1MHz Conditions A A V - - MHz pF pF Packaging specifications and hFE Package Code Type T...
Description Power Transistor (−80V, −1A)

File Size 80.32K  /  4 Page

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    KSC5502DTM

Fairchild Semiconductor
Part No. KSC5502DTM
OCR Text ... c =25 c2.13.0 s t c =125 c2.6 s t on turn on time i c =1a, i b1 =160ma i b2 =160ma, v cc =300v r l = 300 ? t c =25 c 240 450 ns t c...1mhz c ob c ib capacitance[pf] reverse voltage[v] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 100 100 200 ...
Description High Voltage Power Switch Switching Application
   High Voltage Power Switch Switching Application

File Size 440.89K  /  11 Page

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    ROHM[Rohm]
Part No. 2SB1412 2SB1326 2SB1386
OCR Text ...5 +0.2 -0.1 2SB1412 1.50.3 6.50.2 5.1+0.2 -0.1 C0.5 2.3+0.2 -0.1 0.50.1 5.5+0.3 -0.1 (1) (2) (3) 0.40.1 1.50.1 1.00.2 ...1MHz Conditions Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage Collecto...
Description Low Frequency Transistor(-20V,-5A)

File Size 93.24K  /  5 Page

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    BUZ20

Intersil Corporation
Part No. BUZ20
OCR Text ...ied BUZ20 100 100 12 48 20 75 0.6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W W/oC oC Drain to Source Breakdown Voltage (Note 1) . ....1MHz (Figure 10) TYP 3 20 100 10 0.15 4.0 30 50 110 60 1500 300 80 1.67 75 MAX 4 250 1000 100 0.20...
Description 12A/ 100V/ 0.200 Ohm/ N-Channel Power MOSFET
12A, 100V, 0.200 Ohm, N-Channel Power MOSFET

File Size 41.72K  /  5 Page

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    Union Semiconductor, Inc.
Union Semiconductor, In...
Part No. UM5080T
OCR Text ... 1/6 um5080t low capacitance bidirectional single line tvs protection diode ...1mhz c j ______________________________________________________________...
Description Low Capacitance Bidirectional Single Line TVS Protection Diode

File Size 248.50K  /  6 Page

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    BFR949T

Infineon Technologies AG
Part No. BFR949T
OCR Text ...C current gain IC = 5 mA, VCE = 6 V hFE 100 140 200 IEBO 0.1 A ICBO 100 nA VBEF 1.05 V(BR)CEO 10 V Symbol min. Values typ. max. Unit 2 ...1MHz Collector-emitter capacitance VCE = 10 V, f = 1MHz Emitter-base capacitance VEB = 0.5 V, f = 1M...
Description RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC-75

File Size 67.18K  /  7 Page

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    BFR949L3

Infineon Technologies AG
Part No. BFR949L3
OCR Text ...C current gain IC = 5 mA, VCE = 6 V hFE 100 140 200 IEBO 0.1 A ICBO 100 nA ICES 100 A V(BR)CEO 10 V Symbol min. Values typ. max. Unit 2 ...1MHz Collector-emitter capacitance VCE = 10 V, f = 1MHz Emitter-base capacitance VEB = 0.5 V, f = 1M...
Description RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in TSLP-3

File Size 27.03K  /  3 Page

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