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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TRS15N120HB
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| Description |
SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW045N120C
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| Description |
N-ch SiC MOSFET, 1200 V, 40 A, 0.059 Ω@18 V, TO-247
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW015N120C
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| Description |
N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247
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| Tech specs |
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Official Product Page
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Infineon Technologies A...
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| Part No. |
IKY75N120CH3
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| Description |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
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| File Size |
1,988.37K /
16 Page |
 View
it Online |
Download Datasheet
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Infineon Technologies A...
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| Part No. |
IKQ75N120CH3
|
| Description |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
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| File Size |
2,037.24K /
16 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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