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RENESAS[Renesas Electronics Corporation]
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| Part No. |
H5N5001FM
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| OCR Text |
...0 30 10 3 1 0.3 0.1 0.03 0.01 0 50 100 150 Tc (C) 200 1 Case Temperature
Maximum Safe Operation Area
10 10
PW
DC Op er
30
Channe...Europe Asia Japan
: : : :
http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg ... |
| Description |
Silicon N Channel MOS FET High Speed Power Switching
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| File Size |
56.82K /
10 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
H5N5004PL
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| OCR Text |
...t VDD = 400 V, VGS = 10 V, ID = 50 A) Avalanche ratings Built-in fast recovery diode: trr = 190 ns typ
Outline
TO-3PL
D
G
1
...Europe Asia Japan
: : : :
http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg ... |
| Description |
Silicon N Channel MOS FET High Speed Power Switching
|
| File Size |
27.20K /
5 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
H5N6001P
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| OCR Text |
...1 c= e sh ot) 25 ratio C n )
50
0.1 this area is 0.03 0.01
Operation in limited by RDS(on)
Ta = 25C 1 30 3 10 100 300 1000 Drain...Europe Asia Japan
: : : :
http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg ... |
| Description |
Silicon N-Channel MOSFET High-Speed Power Switching
|
| File Size |
95.48K /
10 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
HA-P
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| OCR Text |
...erature Coefficient (%/C) z
50
Zener Voltage Temperature Coefficient z (mV/C)
1.0
40
0.06 0.04 0.02 0
%/C
30 20
0.8
...Europe Asia Japan
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http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg ... |
| Description |
Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter
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| File Size |
42.62K /
9 Page |
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it Online |
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M/A-COM / Tyco Electronics
MA-Com
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| Part No. |
AT220V5
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| OCR Text |
...y Low Intermodulation Product: +50 dBm IP3 Low DC Power Consumption: 50 W SOIC-16 Plastic Package Tape and Reel Packaging Available Temperat...Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.8... |
| Description |
Digital Attenuator
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| File Size |
163.85K /
3 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
HAF2002
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| OCR Text |
... 0.8 0.35 175 -- Max -- 1.2 100 50 1 -- -- -- 13 Unit V V A A A mA mA C V Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Vi = 1.2V, VDS = 0 Vi = 8V, VD...Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sic... |
| Description |
Silicon N Channel MOS FET Series Power Switching
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| File Size |
37.32K /
7 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
HAF2011S HAF2011 HAF2011L
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| OCR Text |
...
Ratings 60 16 -2.5 40 80 40 50 150 -55 to +150
Unit V V V A A A W C C
Typical Operation Characteristics
Item Input voltage Symbol...Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sic... |
| Description |
Silicon N Channel MOS FET Series Power Switching
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| File Size |
33.66K /
6 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
HAT2049T
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| OCR Text |
...S(on)
(
Ta = 25 C
0
50
100
150 Ta (C)
200
Ambient Temperature
0.01 1 shot Pulse 0.1 0.3 1 3 10 30 100 Drain to So...Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sic... |
| Description |
Silicon N Channel Power MOS FET High Speed Power Switching
|
| File Size |
50.95K /
9 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
HAT2052T
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| OCR Text |
...5 s)
er
at
ion
0
50
100
150 Ta (C)
200
Ambient Temperature
0.01 1 shot Pulse 0.1 0.3 1 3 10 30 100 Drain to So...Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sic... |
| Description |
Silicon N Channel Power MOS FET High Speed Power Switching
|
| File Size |
54.95K /
9 Page |
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it Online |
Download Datasheet |
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