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VISAY[Vishay Siliconix]
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| Part No. |
232261513472 23226151 232261513202 232261513222
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| OCR Text |
...-10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 150 RT/R25 27.23 20.06 14.92 11.20 ...79 7.05 6.34 5.66 5.00 5.64 6.26 6.87 7.46 8.04 8.61 9.16 9.69 10.22 10.73 11.23 11.72 12.20 12.66 1... |
| Description |
Surface Mount, NTC Thermistors
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| File Size |
109.74K /
11 Page |
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it Online |
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Microsemi, Corp.
ADPOW[Advanced Power Technology]
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| Part No. |
APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B2LL04 APT50M75B2LLG
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| OCR Text |
...0
40
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
APT50M75B...79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
... |
| Description |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 R MOSFET
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| File Size |
162.79K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5510LFLL APT5510B2FLL
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| OCR Text |
...covery.
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Perfor...79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
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| Description |
POWER MOS 7 FREDFET
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| File Size |
90.79K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT56F50L APT56F50B2
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| OCR Text |
... VGG = 15V
275 220 50 100 38 45 100 33 nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter...79 (.228) 6.20 (.244)
e3 100% Sn Plated
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (... |
| Description |
N-Channel FREDFET
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| File Size |
253.30K /
4 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT56M50L APT56M50B2
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| OCR Text |
...0 120 945 550 275 220 50 100 38 45 100 33
Max
Unit S
VGS = 0V, VDS = 0V to 333V
Co(er) = -2.04E-7
2 VDS
pF
5
+
4.76E-...79 (.228) 6.20 (.244)
e3 100% Sn Plated
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (... |
| Description |
APT56M50B2
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| File Size |
374.99K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT6015LVFR APT6015B2VFR
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| OCR Text |
...MAX UNIT pF
7500 900 320 315 45 125 15 13 45 5
9000 1260 480 475 70 190 30 26 70 10
ns nC
Gate-Source Charge Gate-Drain ("Miller")...79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
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| Description |
POWER MOS V FREDFET
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| File Size |
132.66K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT6017B2LL_04 APT6017B2LL04
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| OCR Text |
...0
20
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
APT6017B2...79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
159.85K /
5 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
APT6017LFLL APT6017B2FLL APT6017B2FLL_04 APT6017B2FLL04
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| OCR Text |
...0
20
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
APT6017 B...79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
160.75K /
5 Page |
View
it Online |
Download Datasheet |
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