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  2a 650v Datasheet PDF File

For 2a 650v Found Datasheets File :: 197    Search Time::1.766ms    
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    Advanced Power Electronics
Part No. AP04N60I-A-HF
OCR Text ...on-resistance 2 v gs =10v, i d =2a - - 2.5 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =2a - 3.4 - s i dss drain-source leakage current v ds =480v, v gs =0v - - 100 ua i gss ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 113.16K  /  4 Page

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    2N6674 2N6675

Savantic, Inc.
Part No. 2N6674 2N6675
OCR Text ... 15 1.0 40 20 MHz mA IC=10A; IB=2a IC=15A; IB=5A IC=10A; IB=2a VCB=450V; IE=0 0.1 mA IC=0.2a ;IB=0 400 1.0 5.0 1.5 V V V CONDITIONS MIN 300 V TYP. MAX UNIT SYMBOL 2 SavantIC Semiconductor Product Specification Silicon NPN Pow...
Description Silicon NPN Power Transistors

File Size 107.71K  /  3 Page

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    2N6674

Quanzhou Jinmei Electronic Co.,Ltd.
Part No. 2N6674
OCR Text ... sustaining voltage 2N6675 IC=0.2a ;IB=0 300 V 400 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=2a 1.0 V VC...650v; IE=0 mA IEBO hFE-1 Emitter cut-off current VEB=7V; IC=0 IC=1A ; VCE=3V 15 1.0 m...
Description Silicon NPN Power Transistors

File Size 36.78K  /  3 Page

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    AP04N70BP-A07 AP04N70BP-A-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP04N70BP-A07 AP04N70BP-A-14
OCR Text ...e on-resistance v gs =10v, i d =2a - - 2.4 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =2a - 2.5 - s i dss drain-source leakage current (t j =25 o c) v ds =600v, v gs =0v - -...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fast Switching Characteristic

File Size 67.17K  /  6 Page

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    AP04N70BI-A

Advanced Power Electronics Corp.
Part No. AP04N70BI-A
OCR Text ...on-resistance 3 v gs =10v, i d =2a - - 2.4 ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =2a - 2.5 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua drain-...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 102.83K  /  6 Page

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    AP01L60P AP04N70BP

A-POWER[Advanced Power Electronics Corp.]
Part No. AP01L60P AP04N70BP
OCR Text ...nt (Tj=150 C) o VGS=10V, ID=2a VDS=VGS, ID=250uA VDS=10V, ID=2a VDS=600V, VGS=0V VDS=480V,VGS=0V VGS= 30V ID=4A VDS=480V VGS=10V VDD=30...650v = BVDSS 700V AP04N70BP 2.5 2 T C =25 o C 2 V G =10V V G =6.0V V G =5.0V 1.5 ...
Description N-CHANNEL ENHANCEMENT MODE

File Size 81.28K  /  6 Page

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    DF11-28DP-2DSA DF11-28DS-2C DF11-28DS-2DSA DF11-28DS-2R26 DF11-12DP-2DSA DF11-14DS-2C DF11-14DS-2DSA DF11-14DS-2R26 DF11

Hirose Electric
Part No. DF11-28DP-2DSA DF11-28DS-2C DF11-28DS-2DSA DF11-28DS-2R26 DF11-12DP-2DSA DF11-14DS-2C DF11-14DS-2DSA DF11-14DS-2R26 DF11-12DS-2C DF11-12DS-2DSA DF11-12DS-2R26 DF11-30DP-2DSA DF11-32DS-2C DF11-32DS-2DSA DF11-32DS-2R26 DF11-20DP-2DSA DF11-8DP-2DSA DF11-24DP-2DSA DF11-22DP-2DSA DF11-16DP-2DSA DF11CZ-20DS-2V DF11CZ-10DS-2V DF11CZ-18DS-2V DF11CZ-22DS-2V DF11CZ-26DS-2V DF11CZ-30DS-2V DF11CZ-40DS-2V DF11CZ-4DS-2V DF11CZ-6DS-2V DF11CZ-8DS-2V DF11-22DS-2C DF11-22DS-2DSA DF11-22DS-2R26 DF11-26DS-2C DF11-26DS-2DSA DF11-26DS-2R26 DF11-4DS-2R261
OCR Text ...pecifications AWG #22 to #26 : 2a Current rating Rating (Note 1) Insulation Displacement Wire size Voltage rating Crimping Crimping Wire si...650v AC/1 minute 100mA Measured by the square steel-made pin of 0.50.002mm No flashover or insula...
Description 2mm Double-Row Connector (Product Compliant to UL/CSA Standard)

File Size 442.92K  /  14 Page

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    H02N65

Hi-Sincerity Mocroelectronics
Part No. H02N65
OCR Text ...c (v dd =100v, v gs =10v, i l =2a, l=10mh, r g =25 ) 120 mj t l maximum lead temperature for soldering purposes, 1/8? from case for 1...650v, v gs =0v) - - 5 ua i dss drain-source leakage current (v ds =480v, v gs =0v, t j =125 ...
Description N-Channel Power Field Effect Transistor

File Size 124.60K  /  6 Page

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    HFS10N65S

SemiHow Co.,Ltd.
Part No. HFS10N65S
OCR Text ...mperature 2. l=14.2mh, i as =9.2a, v dd =50v, r g =25 ? , starting t j =25 c 3. i sd 9.2a, di/dt200a/s, v dd bv dss , starting t j =25 c 4. pulse test : pulse width 300s, duty cycle 2% 5. essentially independent of operating te...
Description 650v N-Channel MOSFET

File Size 877.94K  /  7 Page

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For 2a 650v Found Datasheets File :: 197    Search Time::1.766ms    
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