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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDD3672 FDD3672NL
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| OCR Text |
28m
Features
* r DS(ON) = 24m (Typ.), VGS = 10V, ID = 44A * Qg(tot) = 24nC (Typ.), VGS = 10V * Low Miller Charge * Low Qrr Body Diode * Optimized efficiency at high frequencies * UIS Capability (Single Pulse and Repetitive Pulse) * Qualif... |
| Description |
N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 44A, 0.028 Ohms @ VGS = 10V, TO-252/DPAK Package
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mOhm
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| File Size |
171.11K /
11 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDM3300NZ_07 FDM3300NZ
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| OCR Text |
... = 4.5V, ID = 10A Max rDS(on) = 28m at VGS = 2.5V, ID = 9A >2000V ESD protection Low Profile - 1mm maximum - in the new package MLP 3.3x3.3 mm RoHS Compliant
(R) MOSFET
tm
This dual N-Channel MOSFET has been designed using Fairchil... |
| Description |
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 10A, 23mヘ
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| File Size |
188.85K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRFIZ34VPBF
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| OCR Text |
...SFET
D
VDSS = 60V RDS(on) = 28m
G S
ID = 20A
Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined w... |
| Description |
Advanced Process Technology
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| File Size |
211.15K /
8 Page |
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KEC[KEC(Korea Electronics)]
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| Part No. |
KMB010P30QA
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| OCR Text |
...)=20m (Max.) @ VGS=-10V RDS(ON)=28m (Max.) @ VGS=-4.5V Super High Dense Cell Design
1 4 B1 B2 8 5 A
MOSFET Maximum Ratings (Ta=25
CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC Drain Current Pulsed Drain Source Diode Forwar... |
| Description |
P-Ch Trench MOSFET
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| File Size |
460.35K /
4 Page |
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KEC Holdings
KEC[KEC(Korea Electronics)]
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| Part No. |
KMB6D0DN30QA
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| OCR Text |
...n-Source ON Resistance. RDS(ON)=28m RDS(ON)=42m (Max.) @VGS=10V (Max.) @VGS=4.5V
B1 B2 1 4 8 5 A
Super High Dense Cell Design High Power and Current Handing Capability
DIM A B1 B2 D G H L P T
MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 ... |
| Description |
Dual N-Ch Trench MOSFET 双N沟道MOSFET通道
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| File Size |
462.34K /
5 Page |
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SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPN4412S8TG SPN4412 SPN4412S8RG
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| OCR Text |
...ng . FEATURES 30V/6.8A,RDS(ON)= 28m@VGS= 10V 30V/5.6A,RDS(ON)= 36m@VGS= 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP - 8P package design APPLICATIONS Power Ma... |
| Description |
N-Channel Enhancement Mode MOSFET N沟道增强型MOS
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| File Size |
205.52K /
8 Page |
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SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPN4426S8TG SPN4426 SPN4426S8RG
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| OCR Text |
...ng . FEATURES 20V/8.0A,RDS(ON)= 28m@VGS= 4.5V 20V/7.0A,RDS(ON)= 36m@VGS= 2.5V 20V/3.0A,RDS(ON)= 42m@VGS= 1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP - 8P pac... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
228.28K /
8 Page |
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it Online |
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Price and Availability
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