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INFINEON[Infineon Technologies AG]
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Part No. |
IPB15N03L IPP15N03L 15N03L
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OCR Text |
...v/dt VGS Ptot T j , Tstg
168 20 8 6 20 83 -55... +175 55/175/56 kV/s V W C mJ
Avalanche energy, single pulse
ID=20A, VDD=25V, RGS=25
...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB... |
Description |
IPP15N03L OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42A, LL OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 12.9mOhm, 42A, LL OptiMOS Buck converter series OptiMOS Buck converter series
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File Size |
448.37K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG] http://
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Part No. |
IPD12N03L IPU12N03L
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OCR Text |
...sipation
TC=25C
VGS Ptot
20 100
V W
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Tj , Tstg
-55.....40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB... |
Description |
DDM43W2S OptiMOS Power MOSFET, 30V, TO251, RDSon = 10.4mOhm, 30A, LL OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL OptiMOS Buck converter series
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File Size |
151.83K /
8 Page |
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it Online |
Download Datasheet
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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Part No. |
BCR112W Q62702-C2284
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OCR Text |
...rent
ICBO
100
nA mA 1.61 20 V 0.3 1.5 2.5 6.2 1.1 k -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.8
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage ... |
Description |
NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit) 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN Silicon Digital Transistor (Switching circuit/ inverter/ inferface circuit/ driver circuit) NPN Silicon Digital Transistor (Switching circuit inverter inferface circuit driver circuit) From old datasheet system
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File Size |
35.04K /
4 Page |
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it Online |
Download Datasheet
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Price and Availability
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