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1ns Datasheet PDF File

For 1ns Found Datasheets File :: 2386 Search Time::0.906ms
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				MAXIM INTEGRATED PRODUCTS INC MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc.
Part No.	MAX3967ETG MAX3967 MAX3967D MAX3967E
OCR Text	...o +85C. Input data edge speed = 1ns (typ), PB1 = PB2 = VEE, PB3 = open. Typical values are at VCC = +3.3V, TC connected to TCNOM, TA = +25C.) (Note 5) PARAMETER Data Input Range Output-Current Edge Speed Output-Current Pulse-Width Correcti...
Description	SPECIALTY INTERFACE CIRCUIT, QCC24 270Mbps SFP LED Driver
File Size	316.90K / 14 Page	View it Online	Download Datasheet

				HYNIX SEMICONDUCTOR INC
Part No.	HYNIXSEMICONDUCTORINC-HYM71V16M655AT6-8 HYM71V16M655ALT6-8
OCR Text	... address signal input hold time 1ns 1ns 1ns 10h 10h 10h byte34 data signal input setup time 2ns 2ns 2ns 20h 20h 20h byte35 data signal input hold time 1ns 1ns 1ns 10h 10h 10h byte36 ~61 superset information (may be used in future) - ...
Description	16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
File Size	244.10K / 14 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4S511533F-YF
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. assumed input rise and fall time (tr & tf) = 1ns. if tr & tf is longer than 1ns, trans ient time compensation should be considered, i.e., [(tr + ...
Description	8M x 16Bit x 4 Banks Mobile SDRAM
File Size	136.12K / 12 Page	View it Online	Download Datasheet

				Elite Semiconductor Memory Technology Inc.
Part No.	M52D16161A-10BG M52D16161A-10TG M52D16161A
OCR Text	...lock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter. 3.Assumed input rise and fall time (tr & tf)=1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns sho...
Description	512K x 16Bit x 2Banks Synchronous DRAM
File Size	754.07K / 29 Page	View it Online	Download Datasheet

				Elite Semiconductor Memory Technology Inc.
Part No.	M52S16161A-10BG M52S16161A-10TG
OCR Text	...lock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter. 3.Assumed input rise and fall time (tr & tf)=1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns sho...
Description	512K x 16Bit x 2Banks Synchronous DRAM
File Size	752.86K / 29 Page	View it Online	Download Datasheet

				HYNIX SEMICONDUCTOR INC
Part No.	HY57V641620FLTP-7
OCR Text	... (input rise and fall time) is 1ns. if t r & t f > 1ns, then [(t r +t f )/2-1]ns should be added to the parameter. 2. access time to be measured with in put signals of 1v/ns edge rate, from 0.8v to 0.2v. if t r > 1ns, ...
Description	4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
File Size	131.39K / 13 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	M366S3323CT0-C1L M366S3323CT0 M366S3323CT0-C1H
OCR Text	...h 20h 2 2 2 Rows of 64MB 2ns 1ns 2ns 2ns 1ns 2ns Rev 0.1 Apr. 2000 SERIAL PRESENCE DETECT Byte # 35 36~61 62 63 64 65~71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95~98 99~125 126 127 128+ Function Descr...
Description	PC100 Unbuffered DIMM 32MB x 64 SDRAM DIMM based on 16MB x 8, 4Banks, 4KB Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
File Size	54.11K / 7 Page	View it Online	Download Datasheet

For 1ns Found Datasheets File :: 2386 Search Time::0.906ms
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