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  1805-1880 Datasheet PDF File

For 1805-1880 Found Datasheets File :: 466    Search Time::1.953ms    
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    NXP Semiconductors N.V.
Part No. BLF7G20L-90P BLF7G20LS-90P BLF7G20L-90P-15
OCR Text ...rat ion at 1427 mhz to1525 mhz, 1805 mhz to 1880 mhz and 2110 mhz to 2170 mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? designed for broadband operation (1427 ...
Description Power LDMOS transistor BLF7G20L-90P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;BLF7G20L-90P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;

File Size 156.83K  /  15 Page

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    MAFR-000072-DS1C1R

M/A-COM Technology Solutions, Inc.
Part No. MAFR-000072-DS1C1R
OCR Text 1805 MHz--1880 MHz Applications Wireless Infrastructure DCS Rev. A Features RoHS Compliant BeO free Electrical Specifications Parameter Frequency Range Impedance Insertion Loss Isolation VSWR 1. 2. All specifications guarantee...
Description Single Junction Robust Lead Circulator 1805 MHz-1880 MHz

File Size 85.02K  /  2 Page

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    PTFA181001GL PTFA181001HL

Infineon Technologies AG
Part No. PTFA181001GL PTFA181001HL
OCR Text ...r amplifier applications in the 1805 to 1880 mhz band. features include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. manufactured with infineon's advanced ldmos process, these devices provide e...
Description Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ?1880 MHz

File Size 316.73K  /  11 Page

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    PTFA181001GL09

Infineon Technologies AG
Part No. PTFA181001GL09
OCR Text ...r amplifier applications in the 1805 to 1880 mhz band. features include input and output matching, and thermally- enhanced open-cavity package with copper flange. manufactured with infineon's advanced ldmos process, this device provides exc...
Description Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805-1880 MHz

File Size 401.56K  /  10 Page

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    PH1819-45 PHL819-45

Ecliptek, Corp.
Tyco Electronics
Part No. PH1819-45 PHL819-45
OCR Text 1805 - 1880 MHz Features NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System -(22.95) PHl819-45 900 Vl .oo .17...
Description Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz
Low Power Zero-Drift Operational Amplifier with Internal Capacitors; Package: PDIP; No of Pins: 8; Temperature Range: 0&deg;C to 70&deg;C 无线双极功率晶体管,451805年至1880年兆
Wireless Bipolar Power Transistor/ 45W 1805 - 1880 MHz
Low Power Zero-Drift Operational Amplifier with Internal Capacitors; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C

File Size 134.79K  /  2 Page

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    PTFA181001E

Infineon Technologies AG
Part No. PTFA181001E
OCR Text ...high power rf ldmos fets 100 w, 1805 ? 1880 mhz 2-carrier wcdma drive-up v dd = 28 v, i dq = 750 ma, ? = 1880 mhz, 3gpp wcdma signal, p/a r = 8 db, 10 mhz carrier spacing -53 -48 -43 -38 -33 -28 -23 34 36 38 40 42 44 46 average output po...
Description Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ?1880 MHz

File Size 399.72K  /  11 Page

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    Motorola
Part No. MHL18926
OCR Text ...tion Application MHL18926 1805-1880 MHz, 10 W, 28.6 dB RF LINEAR LDMOS AMPLIFIER CASE 301AY-01, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Rang...
Description MHL18926 1805-1880 MHz, 10 W, 28.6 dB RF Linear LDMOS Amplifier

File Size 92.24K  /  2 Page

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    FAR-F6KB-1G8425-B4GA

Fujitsu Component Limited.
Part No. FAR-F6KB-1G8425-B4GA
OCR Text ...trical specifications Passband: 1805 ~ 1880 MHz Item Insertion Loss Ripple Absolute attenuation Condition 1805~1880 MHz 1805~1880 MHz DC~1300 MHz 1300~1705 MHz 1705~1785 MHz 1920~1980 MHz 1980~3000 MHz 3000~5000 MHz 5000~6000 MHz Speci...
Description DCS-Rx (50/150ohm)

File Size 134.38K  /  6 Page

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    NXP Semiconductors N.V.
Part No. BLF6G22LS-40P BLF6G22L-40P
OCR Text ... from 2110 mhz to 2170 mhz and 1805 mhz to 1880 mhz. [1] the performance is tested on the class ab demo board as depicted in figure 11 . [2] test signal: 3gpp; test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier ...
Description Power LDMOS transistor BLF6G22LS-40P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;BLF6G22LS-40P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;

File Size 151.37K  /  16 Page

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    MRF8S18120HR3 MRF8S18120HSR3

Freescale Semiconductor, Inc
Part No. MRF8S18120HR3 MRF8S18120HSR3
OCR Text ...lications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW Frequency 1805 MHz ...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 280.43K  /  14 Page

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For 1805-1880 Found Datasheets File :: 466    Search Time::1.953ms    
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