Part Number Hot Search : 
TH7888A 2SK1382 DXT2907A SM5840FS AP1509 RS684M16 BA03002S BA03002S
Product Description
Full Text Search
  0.5-12ghz Datasheet PDF File

For 0.5-12ghz Found Datasheets File :: 332    Search Time::3.453ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

    EPA030D

Excelics Semiconductor, Inc.
Part No. EPA030D
OCR Text ...n microns features ? +18.0 dbm output power at 1db compression ? 19.5 db power gain at 12ghz ? 0.3 x 300 micron recessed ?mushroom? dual gate ? si 3 n 4 passivation ? advanced epitaxial doping profile provides extra high...
Description High Performance Heterojunction Dual-Gate FET

File Size 88.92K  /  2 Page

View it Online

Download Datasheet





    EPA030C EPA030CV

Excelics Semiconductor, Inc.
Part No. EPA030C EPA030CV
OCR Text ....0db for epa030cv at 18ghz ? 0.3 x 300 micron rece ssed ?mushroom? gate ? si 3 n 4 passivation and plated heat sink ? advanced epit...5 12.5 14.0 g 1db gain at 1db compression f = 12ghz v ds = 8v, i ds 5...
Description High Efficiency Heterojunction Power FET

File Size 90.65K  /  2 Page

View it Online

Download Datasheet

    EPA030B

Excelics Semiconductor, Inc.
Part No. EPA030B
OCR Text ...cal power gain at 12ghz 0.3 x 300 micron recessed ?mushroom? dual gate si 3 n 4 passivation advanced epitaxial d...5 19.5 db nf noise figure vds=3v, ids=15ma, vg2s=0v f=12ghz 1....
Description High Performance Heterojunction Dual-Gate FET

File Size 40.90K  /  2 Page

View it Online

Download Datasheet

    TC2101

Transcom, Inc.
Part No. TC2101
OCR Text ...ar power gain at 12 ghz lg = 0.25 m, wg = 160 m tight vp ranges control high rf input power handling capability 100 % dc tes...5 1.8 db g a associated gain at v ds = 2 v, i ds = 10 ma, f = 12ghz 7 8 db p 1db outpu...
Description Plastic Packaged Low Noise PHEMT GaAs FETs

File Size 163.25K  /  4 Page

View it Online

Download Datasheet

    EFA018A-70

List of Unclassifed Manufacturers
ETC[ETC]
Excelics Semiconductor
Part No. EFA018A-70
OCR Text ...10.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH ...5 9.0 All Dimensions In mils. TYP 18.5 18.5 10.5 8.0 33 1.1 10.5 MAX UNIT dBm dB % dB dB...
Description Low Distortion GaAs Power FET

File Size 19.06K  /  2 Page

View it Online

Download Datasheet

    EFA025A-70

List of Unclassifed Manufacturers
ETC[ETC]
Excelics Semiconductor
Part No. EFA025A-70
OCR Text ...D 10dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH ...5 TYP 20 20 10 7 35 1.5 10 65 40 -2 -15 -14 370* MAX UNIT dBm dB % dB dB mA mS V V V o C/W 35 30 ...
Description Low Distortion GaAs Power FET

File Size 31.33K  /  2 Page

View it Online

Download Datasheet

    EFA025AL

Excelics Semiconductor, Inc.
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA025AL
OCR Text 0.3 X 250 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND ...5 Chip Thickness: 75 13 microns All Dimensions In Microns MIN TYP 20.0 20.0 11.5 9.0 38 ...
Description High Gain GaAs Power FET 高增益GaAs功率场效应管

File Size 20.54K  /  2 Page

View it Online

Download Datasheet

    EFA040A-70

Electronic Theatre Controls, Inc.
Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA040A-70
OCR Text ...0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH ...5 TYP 22.0 22.0 8.0 5.0 33 105 60 -2.0 -10 -6 -15 -14 250* o MAX UNIT dBm dB % Vds=3V, Vgs...
Description Low Distortion GaAs Power FET 低失真GaAs功率场效应管

File Size 18.75K  /  2 Page

View it Online

Download Datasheet

    EFA060B-70

Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA060B-70
OCR Text ... dB TYPICAL POWER GAIN AT 12GHz 0.3 X 600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH ...5 5.0 33 100 70 170 90 -2.0 -15 -14 175* o MAX UNIT dBm dB % 240 mA mS -3.5 V V V...
Description Low Distortion GaAs Power FET
From old datasheet system

File Size 18.75K  /  2 Page

View it Online

Download Datasheet

    EFC060B

Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFC060B
OCR Text ...AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH ...5 8.0 35 MAX UNIT dBm dB % 80 50 130 70 -2.5 180 mA mS -4.0 V V V o Drai...
Description Low Distortion GaAs Power FET

File Size 20.98K  /  2 Page

View it Online

Download Datasheet

For 0.5-12ghz Found Datasheets File :: 332    Search Time::3.453ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of 0.5-12ghz

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.75190997123718