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10N12 C10E1 36003500 5924B M58WR C9S12 TGL3468 KN2222AS
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  0.0057 Datasheet PDF File

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    Renesas
Part No. 2SK1313S 2SK1313L
OCR Text ...10 250 V A A I G = 100 A, VDS = 0 VGS = 25 V, V DS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 -- -- |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2.5 -- -- -- -- -- -- -- -- -- -- 1.0 1.2 4.0 640 160 20 10 25 50 30 0....
Description Transistors>Switching/MOSFETs

File Size 67.60K  /  11 Page

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    2SK3230B

NEC
Part No. 2SK3230B
OCR Text ... PACKAGE DRAWING (Unit: mm) 0.3 0.05 0.4 0.1-0.05 +0.1 * Low noise: -108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 k) * Especially suitable for audio and telephone * Small package: SC-89 (TUSM) 1.6 0.1 0.8 0.1 FEATUR...
Description N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
N-CHANNEL SILICON J-FET

File Size 118.89K  /  5 Page

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    RENESAS
Part No. 2SK3235
OCR Text ...* Low on-resistance: R DS(on) = 0.3 typ. Low leakage current: IDSS = 1 A max (at VDS = 500 V) High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A) Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 1...
Description
File Size 64.19K  /  12 Page

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    2SK3236

Toshiba Semiconductor
Hitachi Semiconductor
Part No. 2SK3236
OCR Text ...ting 60 60 20 35 105 30 68 35 3.0 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage tempera...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
From old datasheet system
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications

File Size 216.40K  /  6 Page

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    2SK3748

SANYO[Sanyo Semicon Device]
Part No. 2SK3748
OCR Text 0 5.6 3.1 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 3.5 5.45 5.45 VIN 10V 0V VIN VDD 200V ID=2A RL=100 2.0 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PML 50 RG L D PW=10s D.C...
Description N CHANNEL MOS SILICON TRANSISTOR
High-Voltage High-Speed Switching Applications
High-Voltage, High-Speed Switching Applications
From old datasheet system

File Size 55.20K  /  4 Page

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    FUJI[Fuji Electric]
Part No. 2SK3789-01R
OCR Text ...annel to ambient Min. 150 3.0 Typ. Max. 5.0 25 250 100 26 Units V V A nA m S pF 12 21 24 3800 5400 530 795 35 52.5 40 60 112 168 56 84 30 45 80 120 30 45 25 38 1.20 1.50 250 2.0 ns nC V ns C Thermalcharacter...
Description N-CHANNEL SILICON POWER MOSFET

File Size 93.05K  /  4 Page

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    2SK3929-01MR

FUJI[Fuji Electric]
Part No. 2SK3929-01MR
OCR Text ...VDSS,Tch= 150C = Min. 600 3.0 Tch=25C Tch=125C Typ. Max. 5.0 25 2.0 100 0.80 Units V V A mA nA S pF 5 0.62 10 1100 1650 150 225 8 12 17 26 7 11 40 60 8 12 30 45 9 13.5 10 15 1.00 1.50 120 250 0.6 1.5 ns nC V n...
Description N-CHANNEL SILICON POWER MOSFET

File Size 111.75K  /  4 Page

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    2SK3944

SANYO[Sanyo Semicon Device]
Part No. 2SK3944
OCR Text ... PW=10s D.C. 1% 2.5 G 4.0 1.0 1 0.4 0.5 1.5 2 3 0.4 2SK3944 P.G 50 S 3.0 1 : Gate 2 : Drain 3 : Source Bottom View SANYO : PCP 2SK3944 ...
Description 2SK3944

File Size 56.60K  /  4 Page

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    PREDIP[Precid-Dip Durtal SA]
PRECI-DIP SA
Part No. 316-93-116-41-013 416-93-216-41-013 316-93-116-41-001 316-93-116-41-003 316-93-116-41-004 316-93-116-41-006 316-93-116-41-007 316-93-116-41-008 316-93-116-41-009 316-93-116-41-011 316-93-116-41-012 416-93-216-41-001 416-93-216-41-003 416-93-216-41-004 416-93-216-41-006 416-93-216-41-007 416-93-216-41-008 416-93-216-41-009 416-93-216-41-011 416-93-216-41-012
OCR Text ...r tail Receptacles accept pins 0.40-0.56 mm For corresponding pin connectors see pages 43 to 46 Platings 93 Sleeve 5 m Sn Pb Clip 0.75 m Au Pin Ordering information Replace xx with the number of poles, e.g. 416-93-2xx-41-006...
Description    PCB connectors 2.54 mm Single row / double row Solder tail
PCB connectors 2.54 mm Single row / double row Solder tail 电路板连接器2.54毫米单列/双列焊尾

File Size 56.00K  /  1 Page

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