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Hynix Semiconductor, Inc.
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Part No. |
HYMR16416 HYMR16418H-840
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OCR Text |
... t rac (row access time) ns x16 600 53 x16 711 45 x16 800 40 x18 600 53 x18 711 45 x18 800 45 x18 800 40 x16 800 45
2 rev.1.0 dec.99 ...bit bus containing control and add- ress information for column accesses. a14 i lctm rsl clock to m... |
Description |
32Mx16|2.5V|40|-|Direct RDRAM - 64MB RIMM 64M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA184 RIMM-184
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File Size |
248.51K /
17 Page |
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Sharp Corporation
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Part No. |
LH28F400SU-LC
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OCR Text |
x16 operation ? 5 v write/erase operation (5 v v pp , 3.3 v v cc ) C no requirement for dc/dc converter to write/erase ? 150 ns maximum acce...bit) block erasable non-volatile random access memory organized as either 256k 16 or 512k 8. the l... |
Description |
4M (512K × 8, 256K × 16) Flash Memory 4M (512K 8, 256K 16) Flash Memory
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File Size |
303.93K /
37 Page |
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it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD. Panasonic, Corp. Samsung Semiconductor Co., Ltd.
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Part No. |
K4N56163QF-GC37 K4N56163QF-GC30 K4N56163QF-GC25
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OCR Text |
...exing style. for example, 256mb(x16) device receive 13/9/2 address- ing. the 256mb gddr2 devices operate with a si ngle 1.8v 0.1v power sup...bit for read/write commands to select one loca tion out of the memory array in the respective bank. ... |
Description |
256Mbit gDDR2 SDRAM 56Mbit GDDR2 SDRAM
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File Size |
1,272.03K /
73 Page |
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it Online |
Download Datasheet
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Price and Availability
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