| |
|
 |
PANASONIC[Panasonic Semiconductor]
|
| Part No. |
LN152
|
| OCR Text |
...-efficiency : PO = 10 mW (typ.) Wide directivity, matched for external optical systems : = 100 deg. Infrared light emission close to monochromatic light : P = 950 nm (typ.) Optimum for mesuring instruments and control equipments in conbina... |
| Description |
GaAs Infrared Light Emitting Diode
|
| File Size |
35.81K /
2 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| Part No. |
LN172
|
| OCR Text |
...4.2 +0.2 -0.1
2-o0.450.05
Wide directivity : = 100 deg. (typ.)
15 0. 0 1.
45 3
o5.35 +0.2 -0.1
Absolute Maximum Ratings (Ta = 25C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC)... |
| Description |
GaAlAs Infrared Light Emitting Diode
|
| File Size |
35.25K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
PANASONIC[Panasonic Semiconductor]
|
| Part No. |
LN175
|
| OCR Text |
...y with respect to input current Wide directivity : = 120 deg. (typ.)
3.90.25
4.50.15 3.50.15
2.10.15 1.60.15 0.80.1
12.8 min.
(2.95)
2-1.20.3 2-0.450.15 0.450.15 1 2.54 2
Absolute Maximum Ratings (Ta = 25C)
Parameter Po... |
| Description |
GaAlAs Infrared Light Emitting Diode
|
| File Size |
41.45K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
PANASONIC[Panasonic Semiconductor]
|
| Part No. |
LN51L LN51F
|
| OCR Text |
...ical output : = 8 deg. (LN51L) Wide directivity, matched for external optical systems : = 32 deg. (LN51F) TO-18 standard type package
2.540.25
2 0. 0 1. 1. 0 0. 15
3 45
21
o5.75 max.
1: Cathode 2: Anode
LN51L
o4.60.1... |
| Description |
GaAs Infrared Light Emitting Diodes
|
| File Size |
44.58K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| Part No. |
LN52
|
| OCR Text |
...h-efficiency : PO = 6 mW (typ.) Wide directivity, matched for external optical systems : = 100 deg. Infrared light emission close to monochromatic light : P = 950 nm Optimum for mesuring instruments and control equipments in conbination wi... |
| Description |
GaAs Infrared Light Emitting Diode
|
| File Size |
43.76K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
PANASONIC[Panasonic Semiconductor]
|
| Part No. |
LNA2902L LN66A LN66AL
|
| OCR Text |
...with respect to input current * Wide directivity: = 20 (typ.) * Transparent epoxy resin package * Long lead-wire type
7.650.2
5.00.2
6.00.2
1.0
24.11
5.050.3
1.5
2-0.8 max. 2-0.50.15
0.50.15
(1.5)
Parameter P... |
| Description |
GaAs infrared light emitting diode For optical control systems
|
| File Size |
71.68K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
PANASONIC[Panasonic Semiconductor]
|
| Part No. |
LNA2903L
|
| OCR Text |
...y with respect to input current Wide directivity : = 20 deg. (typ.) Transparent epoxy resin package
13.51.0 11.51.0 3.60.3 1.0 7.650.2
o5.00.2
1.0
2-1.00.15 2-0.60.15
2.54
Absolute Maximum Ratings (Ta = 25C)
Parameter Powe... |
| Description |
GaAs Infrared Light Emitting Diode
|
| File Size |
50.49K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
PANASONIC[Panasonic Semiconductor]
|
| Part No. |
LNA4801L
|
| OCR Text |
...capability : fC = 20 MHz (typ.) Wide directivity : = 22 deg. (typ.) Transparent epoxy resin package
o3.80.2 o3.00.2
Absolute Maximum Ratings (Ta = 25C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse v... |
| Description |
GaAlAs Infrared Light Emitting Diode
|
| File Size |
34.06K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
MINI[Mini-Circuits]
|
| Part No. |
LZY-1
|
| OCR Text |
...th low distortion, -32 dBc typ. wide bandwidth, usable 10 - 525 MHz high gain, 42 dB typ. unconditionally stable self protected against exce...DIRECTIVITY (dB) 27V
43.77 43.57 43.41 43.24 43.20 43.15 43.16 43.37 43.50 43.44 43.50 43.64 43.82 ... |
| Description |
High Power Amplifier 50ヘ 50W 20 to 512 MHz
|
| File Size |
173.80K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
