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  war-electrostatic Datasheet PDF File

For war-electrostatic Found Datasheets File :: 119+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 |   

    DF5A8.2LFU

Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
Part No. DF5A8.2LFU
Description Product for Use Only as Protection against Electrostatic Discharge (ESD). 产品使用,但对静电放电(ESD)保护

File Size 124.36K  /  3 Page

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    NNCD5.1G NNCD5.6G NNCD27G NNCD6.2G NNCD6.8G NNCD4.3G NNCD4.7G NNCD7.5G NNCD3.3G NNCD3.6G NNCD3.9G

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NNCD5.1G NNCD5.6G NNCD27G NNCD6.2G NNCD6.8G NNCD4.3G NNCD4.7G NNCD7.5G NNCD3.3G NNCD3.6G NNCD3.9G
Description ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE : COMMON ANODE 5 PIN MINI MOLD 静电放电噪声裁剪二极管季刊类型:共阳针迷你模
静电放电噪声裁剪二极管季刊类型:共阳5针迷你模

File Size 38.16K  /  8 Page

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    NNCD5.6LG NNCD6.2LG NNCD6.8LG

NEC, Corp.
NEC Corp.
Part No. NNCD5.6LG NNCD6.2LG NNCD6.8LG
Description LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD 低电容式静电放电噪声裁剪二极管季刊类型:共阳针迷你模

File Size 45.47K  /  8 Page

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    NEC Corp.
NEC[NEC]
Part No. NSAD500F
Description ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES DUAL TYPE: COMMON ANODE SC-59 PACKAGE
Prevention of ESD and surge for high-speed interface(USB 2.0, IEEE1394,or 100B)

File Size 30.94K  /  5 Page

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    NEC[NEC]
Part No. NSAD500H
Description Prevention of ESD and surge for high-speed interface(USB2.0, IEEE1394, or 100B)
ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES QUAD TYPE: COMMON ANODE SC-88A PACKAGE

File Size 30.71K  /  5 Page

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    DF3A3.6FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.6FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 148.32K  /  3 Page

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    DF3A8.2LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A8.2LFV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)

File Size 126.44K  /  3 Page

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    DF2S8.2S

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S8.2S
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.08 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 115.34K  /  3 Page

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    DF3A3.6FE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.6FE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.37 to 13.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 150.59K  /  3 Page

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    DF3A3.3FV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.3FV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.91 to 13.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 124.78K  /  3 Page

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