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For w nov Found Datasheets File :: 7215    Search Time::1.422ms    
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    SUP85N10-10P SUP85N10-10-E3

Vishay Siliconix
Part No. SUP85N10-10P SUP85N10-10-E3
OCR Text ...ipation a t c = 25 c p d 227 b w t a = 25 c c 3.75 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal res...nov-11 vishay siliconix sup85n10-10p this document is subject to change without notice. the products...
Description N-Channel 100 V (D-S) MOSFET

File Size 120.11K  /  8 Page

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    SSG4472N

SeCoS Halbleitertechnologie GmbH
Part No. SSG4472N
OCR Text ...on 1 t a = 70c p d 2.2 w operating junction & storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t...nov-2013 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not...
Description N-Ch Enhancement Mode Power MOSFET

File Size 476.06K  /  4 Page

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    VSMF4720 VSMF4720-09

Vishay Siliconix
Part No. VSMF4720 VSMF4720-09
OCR Text ... form: plcc-2 ? dimensions (l x w x h in mm): 3.5 x 2.8 x 1.75 ? peak wavelength: p = 870 nm ? high reliability ? high radiant power ? hi...nov-09 vsmf4720 vishay semiconductors high speed infrared emitting diode, 870 nm, gaalas double het...
Description High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
   High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

File Size 133.56K  /  6 Page

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    VSMF471009

Vishay Siliconix
Part No. VSMF471009
OCR Text ... form: plcc-2 ? dimensions (l x w x h in mm): 3.5 x 2.8 x 1.75 ? peak wavelength: p = 870 nm ? high reliability ? high radiant power ? hi...nov-09 vsmf4710 vishay semiconductors high speed infrared emitting diode, 870 nm, gaalas double het...
Description High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

File Size 132.71K  /  6 Page

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    BU21029MUV-E2

Rohm
Part No. BU21029MUV-E2
OCR Text ...ge power dissipation p d 0.56 w (*1) storage temperature range t stg -50 to 125 rating parameter symbol min typ max unit co...nov.2013 rev.004 www.rohm.co.jp tsz22111 ? 15 ? 001 host interface ac timing the slave address ...
Description 4-wire Resistive Touch Screen Controller

File Size 808.57K  /  29 Page

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    BU21029GUL BU21029GUL-E2

Rohm
Part No. BU21029GUL BU21029GUL-E2
OCR Text ...ge power dissipation p d 0.75 w (*1) storage temperature range t stg -50 to 125 rating parameter symbol min typ max unit co...nov.2013 rev.002 www.rohm.co.jp tsz22111 ? 15 ? 001 host interface ac timing the slave address ...
Description 4-wire Resistive Touch Screen Controller

File Size 751.81K  /  29 Page

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    Ruichips Semiconductor Co., Ltd
Part No. RU1HP40R
OCR Text ...ower dissipation t c =100 c 7 5 w r q jc thermal resistance - junction to case 1 c /w drain - source avalanche ratings e as a valanche ener...nov ., 2011 2 www. ruichips .com ru1h p40r electrical characteristics ( t c =25 c unless otherwise...
Description P-Channel Advanced Power MOSFET

File Size 298.92K  /  9 Page

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    Ruichips Semiconductor Co., Ltd
Part No. RU1H80P RU1H80Q RU1H80S
OCR Text ...power dissipation t c =100 c 88 w r q jc thermal resistance - junction to case 0.8 5 c /w drain - source avalanche ratings e as avalanche e...nov ., 2010 2 www. ruichips .com ru 1h8 0r electrical characteristics ( t a =25 c unless otherwise...
Description N-Channel Advanced Power MOSFET

File Size 513.27K  /  12 Page

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    AON7534

Alpha & Omega Semiconductors
Part No. AON7534
OCR Text ... r ds(on) (at v gs =10v) < 5m w r ds(on) (at v gs = 4.5v) < 8.5m w application 100% uis tested 100% r g tested symbol v ds v gs v m...nov. 2012 www.aosmd.com page 1 of 6 aon7534 symbol min typ max units bv dss...
Description 30V N-Channel AlphaMOS

File Size 271.25K  /  6 Page

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