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ROHM[Rohm]
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| Part No. |
RSS095N05
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| OCR Text |
Transistor
4V Drive Nch MOS FET
RSS095N05
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)
SOP8
5.0
0.4
(8) (5)
...5A, VGS= 10V ID= 9.5A, VGS= 4.5V ID= 9.5A, VGS= 4V VDS= 10V, ID= 9.5A VDS= 10V VGS=0V f=1MHz VDD 25V... |
| Description |
4V Drive Nch MOS FET
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| File Size |
111.98K /
5 Page |
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Quanzhou Jinmei Electro...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD16HHF1 RD16HHF1-15
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| OCR Text |
...ompliance, Silicon MOSFET Power Transistor 30MHz,16W
DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically designed for HF RF p...5A VDD=15.2V,Po=16W(Pin Control) f=30MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) MIN 1.7 16 55 LIMI... |
| Description |
Silicon MOSFET Power Transistor 30MHz,16W
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| File Size |
272.16K /
8 Page |
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it Online |
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Quanzhou Jinmei Electro...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD15HVF1 RD15HVF1-15
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| OCR Text |
...ompliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
DESCRIPTION
RD15HVF1 is a MOS FET type transistor specifically designed for...5A VDD=12.5V, Pin=3W, f=520MHz,Idq=0.5A VDD=15.2V,Po=15W(PinControl) f=175MHz,Idq=0.5A,Zg=50 Load VS... |
| Description |
Silicon MOSFET Power Transistor, 175MHz520MHz,15W
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| File Size |
363.09K /
9 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD06HHF1
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| OCR Text |
...6+/-0.2
Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power...5A VDD=15.2V,Po=6W(Pin Control) f=30MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) MIN 1.9 6 55 LIMITS... |
| Description |
Silicon MOSFET Power Transistor 30MHz,6W
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| File Size |
197.08K /
7 Page |
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it Online |
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ROHM[Rohm]
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| Part No. |
QS6U24
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| OCR Text |
Transistor
Small switching (-30V, -1A)
QS6U24
!Features 1) The QS6U24 conbines Pch Treueh MOSFET with a Schottky barrier diode in a sin...5A, VGS=-4.5V ID=-0.5A, VGS=-4V VDS=-10V, ID=-0.5A VDS=-10V VGS=0V f=1MHz ID=-0.5A VDD -15V VGS=-... |
| Description |
Small switching (-30V, -1A)
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| File Size |
43.38K /
4 Page |
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it Online |
Download Datasheet |
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ROHM[Rohm]
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| Part No. |
QS5U26
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| OCR Text |
Transistor
Small switching (-20V, -1.5A)
QS5U26
!Features 1) The QS5U26 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Pch Treueh MOSFET have a low on-state resisternce with a fast switching. 3) ... |
| Description |
From old datasheet system
Pch Treueh MOSFET with a Schottky barrier Diode
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| File Size |
46.36K /
4 Page |
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it Online |
Download Datasheet |
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ROHM[Rohm]
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| Part No. |
QS5U23
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| OCR Text |
Transistor
Small switching (-20V, -1.5A)
QS5U23
Features 1) The QS5U23 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Pch MOSSFET have a low on-state resistance with a fast switching. 3) Pch MOSFET is r... |
| Description |
Small switching (-20V, -1.5A)
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| File Size |
57.98K /
5 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
QM75TX-H
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| OCR Text |
TRANSISTOR MODULES
QM75TX-H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM75TX-H
* * * * *
IC Collector current .....................5A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
87.31K /
5 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
QM75TX-HB
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| OCR Text |
TRANSISTOR MODULES
QM75TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM75TX-HB
* * * * *
IC Collector current .................5A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per... |
| Description |
MEDIUM POWER SWITCHING USE INSULATED TYPE
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| File Size |
87.83K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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