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transistor-20v -5a Datasheet PDF File

For transistor-20v -5a Found Datasheets File :: 2967 Search Time::1.015ms
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				INTERSIL[Intersil Corporation]
Part No.	HGTP10N40F1D HGTP10N50F1D
OCR Text	...te conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode ...20V, VCE = 0V TJ = +150oC, IC = 5A, VGE = 10V TJ = +150oC, IC = 5A, VGE = 15V TJ = +25oC, IC = 5A, V...
Description	10A 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
File Size	33.70K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL
OCR Text	...te conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (P...20V TYP 100 2.45 3.7 6.8 10.5 53 60 22 15 160 130 450 390 MAX 250 1.5 2.7 4.2 250 65 72 25 20 180 16...
Description	3.3V 72-mc CPLD 21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
File Size	175.44K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	HGTP5N120BN HGT1S5N120BNS FN4599
OCR Text	...te conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies...20V TJ = 150oC, RG = 25, VGE = 15V, L = 5mH, VCE(PK) = 1200V IC = 5A, VCE = 0.5 BVCES IC = 5A, VCE =...
Description	From old datasheet system 21A, 1200V, NPT Series N-Channel IGBTs(21A, 1200V NPT系列N沟道绝缘栅双极型晶体 21A/ 1200V/ NPT Series N-Channel IGBTs XC9536-7VQ44I - NOT RECOMMENDED for NEW DESIGN 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB
File Size	81.48K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation] Fairchild Semiconductor, Corp.
Part No.	HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND
OCR Text	...te conduction loss of a bipolar transistor. The IGBT used is developmental type TA49309. The diode used in anti-parallel is developmental ty...20V TJ = 150oC, RG = 25, VGE = 15V, L = 200H, VCE(PK) = 1200V IC = 5.5A, VCE = 0.5 BVCES IC = 5.5A, ...
Description	From old datasheet system 25A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N沟道绝缘栅双极型晶体 5 A, 1200 V, N-CHANNEL IGBT, TO-247
File Size	86.05K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTP5N120CN HGT1S5N120CNS FN4596
OCR Text	...te conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies...20V TJ = 150oC, RG = 25, VGE = 15V, L = 200H, VCE(PK) = 1200V IC = 5.5A, VCE = 0.5 BVCES IC = 5.5A, ...
Description	From old datasheet system 25A 1200V NPT Series N-Channel IGBT 25A, 1200V, NPT Series N-Channel IGBT 25A/ 1200V/ NPT Series N-Channel IGBT
File Size	79.50K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A
OCR Text	...te conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (P...20V TJ = 150oC, RG = 25, VGE = 15V, L = 5mH, VCE(PK) = 1200V IC = 5A, VCE = 0.5 BVCES IC = 5A, VCE =...
Description	From old datasheet system 21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体 21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB
File Size	88.17K / 7 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	TSD2931-10 SD2931-10
OCR Text	...annel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50V dc lar...20V VDS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V I DS = 100 mA V DS = 50 V V DS = 0...
Description	RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
File Size	91.42K / 10 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	DT455N
OCR Text	TRANSISTOR Features * * * * * High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Sp...20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 11.5A VGS = 10V, ID = 11.5A ...
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	87.56K / 4 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	DT456P
OCR Text	TRANSISTOR Features * * * * * High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Sp...20V, VDS = 0V VGS = -20V, VDS = 0V Symbol Min Typ Max Unit Test Condition SWITCHING CHARACTERISTI...
Description	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	72.57K / 4 Page	View it Online	Download Datasheet

				Diodes Incorporated Zetex Semiconductors
Part No.	FZT968
OCR Text	TRANSISTOR ISSUE 3 OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 44m at 5A * 6 Amps continuous current (Up to 2...20V, f=1MHz IC=-4A, IB1=-400mA IB2=400mA, VCC=-10V nA nA mV mV mV mV mV Transition Frequency O...
Description	SOT223 PNP SILICON PLANAR HIGH CURRENT PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) POWER TRANSISTOR
File Size	96.92K / 2 Page	View it Online	Download Datasheet

For transistor-20v -5a Found Datasheets File :: 2967 Search Time::1.015ms
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