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  power-mesfet Datasheet PDF File

For power-mesfet Found Datasheets File :: 1781    Search Time::5.25ms    
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    M/A-COM / Tyco Electronics
Part No. ITT2305AK
OCR Text Power Amplifier IC for Bluetooth ITT2305AK FEATURES * * * * * * * * 20 dB Gain - dramatically increases range of your low power bluetooth ...MESFET Process PRELIMINARY Vdd1 RFout/Vdd2 GND Vgg2 GND RFin/Vgg1 Descrip...
Description 3.0V 100mW RF Power Amplifier IC for Bluetooth

File Size 104.05K  /  4 Page

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    TRIQUINT[TriQuint Semiconductor]
Part No. TGP2103
OCR Text ...y Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Value -8V to 0V 1 mA 20 dBm 0.1 W 150 C 320 C -65 to 150 0C 0 0 Notes 1/ 2/ 1/ 2/ 1/ 2/ 1/ 2/ 3/...
Description    8.5 - 11 GHz 6-Bit Phase Shifter

File Size 325.17K  /  9 Page

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    MASW4030G

M/A-COM Technology Solutions, Inc.
Part No. MASW4030G
OCR Text ...peed: 3 nS Typical Ultra Low DC Power Consumption Independent Bias Control Rev. V3 Pad Layout G1 RF G1 Description M/A/COM's MASW4030G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low ...
Description GaAs SPDT Switch DC - 4.0 GHz

File Size 57.96K  /  4 Page

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    MACOM[Tyco Electronics]
Part No. SW-243
OCR Text ...peed: 4 nS Typical Ultra Low DC Power Consumption Small Package Size: 0.250" Square RF1 SW-243 V3 Functional Schematic GND RF COM GND ...MESFET process. A4 A1 B4 B1 B3 B2 A3 Orientation Tab A2 RF2 GND RF3...
Description Reflective GaAs SP4T Switch DC - 4 GHz

File Size 163.79K  /  3 Page

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    MASW4060G

M/A-COM Technology Solutions, Inc.
Part No. MASW4060G
OCR Text ...peed, 4 nS Typical Ultra Low DC Power Consumption Terminated Option RoHS* Compliant Rev. V4 Pad Layout Description M/A-COM's MASW4060G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion...
Description GaAs SP4T Switch DC - 4.0 GHz

File Size 88.63K  /  3 Page

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    RFMD[RF Micro Devices]
Part No. RF2436
OCR Text ...T switch. The device can handle power levels as high as +28dBm and spans a frequency range from DC to 2500MHz. The switch will operate from ...MESFET Si CMOS Features * Single Positive Power Supply * Low Current Consumption * 0.5dB Inserti...
Description TRANSMIT/RECEIVE SWITCH

File Size 41.37K  /  6 Page

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    RFMD[RF Micro Devices]
Part No. RF2436_06 RF2436 RF2436PCBA
OCR Text ...T switch. The device can handle power levels as high as +28dBm and spans a frequency range from DC to 2500MHz. The switch will operate from ...MESFET Si CMOS SiGe Bi-CMOS Package Style: SOT-5 Features * Single Positive Power Supply * Low...
Description TRANSMIT/RECEIVE SWITCH

File Size 62.06K  /  6 Page

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    RFMD[RF Micro Devices]
Part No. RF2304_06 RF2304 RF2304PCBA-41X RF230406
OCR Text ...above 2.5GHz. With +6dBm output power, it may also be used as a driver in transmitter applications, or in highly linear receivers. The devic...MESFET Si CMOS SiGe Bi-CMOS Package Style: SOIC-8 Features * Single 2.7V to 6.0V Supply * 6dBm...
Description GENERAL PURPOSE LOW-NOISE AMPLIFIER

File Size 237.95K  /  10 Page

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    NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NE721S01-T1B NE721S01 NE721S01-T1
OCR Text POWER GAIN: 7 dB TYP at 12 GHz * HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz * LG = 0.8 m, WG = 330 m * LOW PHASE NOISE: -110 dBc/Hz TYP at 100 ...MESFET, suitable for both amplifier and oscillator applications. Larger gate geometry make this devi...
Description GENERAL PURPOSE L TO X-BAND GaAs MESFET 一般目L至X波段GaAs MESFET器件

File Size 32.61K  /  5 Page

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For power-mesfet Found Datasheets File :: 1781    Search Time::5.25ms    
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