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M/A-COM / Tyco Electronics
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| Part No. |
ITT2305AK
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| OCR Text |
Power Amplifier IC for Bluetooth ITT2305AK
FEATURES
* * * * * * * * 20 dB Gain - dramatically increases range of your low power bluetooth ...MESFET Process
PRELIMINARY
Vdd1
RFout/Vdd2 GND Vgg2
GND RFin/Vgg1
Descrip... |
| Description |
3.0V 100mW RF Power Amplifier IC for Bluetooth
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| File Size |
104.05K /
4 Page |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGP2103
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| OCR Text |
...y Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Value -8V to 0V 1 mA 20 dBm 0.1 W 150 C 320 C -65 to 150 0C
0 0
Notes 1/ 2/ 1/ 2/ 1/ 2/ 1/ 2/ 3/... |
| Description |
8.5 - 11 GHz 6-Bit Phase Shifter
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| File Size |
325.17K /
9 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
SW-243
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| OCR Text |
...peed: 4 nS Typical Ultra Low DC Power Consumption Small Package Size: 0.250" Square
RF1
SW-243 V3
Functional Schematic
GND RF COM GND ...MESFET process.
A4
A1
B4
B1
B3
B2
A3 Orientation Tab
A2
RF2
GND
RF3... |
| Description |
Reflective GaAs SP4T Switch DC - 4 GHz
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| File Size |
163.79K /
3 Page |
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it Online |
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RFMD[RF Micro Devices]
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| Part No. |
RF2436
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| OCR Text |
...T switch. The device can handle power levels as high as +28dBm and spans a frequency range from DC to 2500MHz. The switch will operate from ...MESFET Si CMOS
Features
* Single Positive Power Supply * Low Current Consumption * 0.5dB Inserti... |
| Description |
TRANSMIT/RECEIVE SWITCH
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| File Size |
41.37K /
6 Page |
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it Online |
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RFMD[RF Micro Devices]
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| Part No. |
RF2436_06 RF2436 RF2436PCBA
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| OCR Text |
...T switch. The device can handle power levels as high as +28dBm and spans a frequency range from DC to 2500MHz. The switch will operate from ...MESFET Si CMOS SiGe Bi-CMOS
Package Style: SOT-5
Features * Single Positive Power Supply * Low... |
| Description |
TRANSMIT/RECEIVE SWITCH
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| File Size |
62.06K /
6 Page |
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it Online |
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RFMD[RF Micro Devices]
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| Part No. |
RF2304_06 RF2304 RF2304PCBA-41X RF230406
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| OCR Text |
...above 2.5GHz. With +6dBm output power, it may also be used as a driver in transmitter applications, or in highly linear receivers. The devic...MESFET Si CMOS SiGe Bi-CMOS
Package Style: SOIC-8
Features * Single 2.7V to 6.0V Supply * 6dBm... |
| Description |
GENERAL PURPOSE LOW-NOISE AMPLIFIER
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| File Size |
237.95K /
10 Page |
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it Online |
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NEC, Corp. NEC Corp. NEC[NEC]
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| Part No. |
NE721S01-T1B NE721S01 NE721S01-T1
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| OCR Text |
POWER GAIN: 7 dB TYP at 12 GHz * HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz * LG = 0.8 m, WG = 330 m * LOW PHASE NOISE: -110 dBc/Hz TYP at 100 ...MESFET, suitable for both amplifier and oscillator applications. Larger gate geometry make this devi... |
| Description |
GENERAL PURPOSE L TO X-BAND GaAs MESFET 一般目L至X波段GaAs MESFET器件
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| File Size |
32.61K /
5 Page |
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it Online |
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Price and Availability
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