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  non-ecc ecc Datasheet PDF File

For non-ecc ecc Found Datasheets File :: 1759    Search Time::1.969ms    
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    DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9K1208U0A K9K1208U0A K9K1208U0C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9K1208U0A K9K1208U0A K9K1208U0C
OCR Text ...portable applications requiring non-volatility. PIN CONFIGURATION PIN DESCRIPTION N.C N.C N.C N.C N.C N.C R/B RE CE N.C N.C Vcc Vss...ecc without any block replacement. The said additional block failure rate does not include those rec...
Description 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存
64M x 8 Bit NAND Flash Memory Data Sheet

File Size 356.63K  /  27 Page

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    Infineon
Part No. HYS64V8220GCU-10 HYS64V8220GCU-8 HYS72V8220GCU-10 HYS72V8220GCU-8 HYS72V4200GCU-10 HYS72V4200GCU-8 HYS64V4200GCU-10 HYS64V4200GCU-8
OCR Text ...sation Optimized for byte-write non-parity and ecc applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout compatible to INTEL' Rev. 1.0 module specification s SDRAM Performance: -8 PC100 fCK tAC Clock frequency (max.) ...
Description 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module

File Size 77.28K  /  15 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYS64V8220GU HYS72V8220GU HYS72V4200GU HYSV4200GU PC100_3 HYS6472V4200GU PC66-222-620 HYS64V4200GU-10 HYS64V4200GU-8 HYS64V4200GU-8B HYS64V8220GU-10 HYS64V8220GU-8 HYS64V8220GU-8B HYS72V4200GU-10 HYS72V4200GU-8
OCR Text ...sation Optimized for byte-write non-parity and ecc applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout compatible to INTEL's Rev. 1.0 module specification SDRAM Performance: -8 fCK tAC Clock frequency (max.) Clock a...
Description 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 3.3 4米64/72-Bit一银行内存模块3.3 8米64/72-Bit 2银行内存模块
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 8M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
From old datasheet system

File Size 74.71K  /  15 Page

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    K9K1208U0C K9K1208Q0C K9K1216D0C K9K1216Q0C K9K1216U0C K9K1208D0C

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9K1208U0C K9K1208Q0C K9K1216D0C K9K1216Q0C K9K1216U0C K9K1208D0C
OCR Text ...portable applications requiring non-volatility. 3 K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C X8 4 FLASH...ecc must be employed. To improve the efficiency of memory space, it is recommended that the read or ...
Description 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

File Size 806.29K  /  39 Page

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    K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 K9K1216D0C

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 K9K1216D0C
OCR Text ...portable applications requiring non-volatility. PIN CONFIGURATION PIN DESCRIPTION N.C N.C N.C N.C N.C GND R/B RE CE N.C N.C Vcc Vss...ecc without any block replacement. The said additional block failure rate does not include those rec...
Description 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
64M x 8 Bit NAND Flash Memory

File Size 351.33K  /  26 Page

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    K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G16Q0A

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G16Q0A
OCR Text ...portable applications requiring non-volatility. 2 K9K1G08Q0A K9K1G16Q0A K9K1G08U0A K9K1G16U0A PIN CONFIGURATION (TSOP1) K9K1G08U0A-Y...ecc without any block replacement. The said additional block failure rate does not include those rec...
Description 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

File Size 902.07K  /  43 Page

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    K9K1G08U0B K9K1G08B0B K9K1G08R0B

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9K1G08U0B K9K1G08B0B K9K1G08R0B
OCR Text ...portable applications requiring non-volatility. 2 K9K1G08R0B K9K1G08B0B K9K1G08U0B PIN CONFIGURATION (FBGA) K9K1G08X0B-GCB0,JCB0/GIB...ecc must be employed. To improve the efficiency of memory space, it is recommended that the read fai...
Description 128M x 8 Bit NAND Flash Memory

File Size 945.71K  /  41 Page

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    K9K1G08U0M-YCB0 K9K1G08U0M-YIB0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9K1G08U0M-YCB0 K9K1G08U0M-YIB0
OCR Text ...portable applications requiring non-volatility. Pin Configuration N.C N.C N.C N.C N.C N.C R/ B RE CE N.C N.C Vcc Vss N.C N.C CLE ALE WE ...ecc without any block replacement. The said additional block failure rate does not include those rec...
Description 128M x 8 Bit NAND Flash Memory

File Size 465.75K  /  37 Page

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    SAMSUNG
Part No. K9K4G08U0M
OCR Text ...portable applications requiring non-volatility. 2 K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M PIN CONFIGURATION (TSOP1) K9F2GXXX0M-Y...ecc without any block replacement. The said additional block failure rate does not include those rec...
Description 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory

File Size 573.66K  /  35 Page

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    TC58NVG0S3AFT05

Toshiba.
Toshiba Semiconductor
Part No. TC58NVG0S3AFT05
OCR Text ...tems which require high-density non-volatile memory data storage. FEATURES * Organization Memory cell array 2112 x 64K x 8 Register 2112...ecc) Access time Cell array to register 25 s max Serial Read Cycle 50 ns min Operating current Read ...
Description 1 GBIT (128M × 8 BITS) CMOS NAND EEPROM

File Size 549.33K  /  33 Page

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For non-ecc ecc Found Datasheets File :: 1759    Search Time::1.969ms    
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