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  irfd123 tmos field effect tran Datasheet PDF File

For irfd123 tmos field effect tran Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MGSF3441XT3 MGSF3441XT1

ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Part No. MGSF3441XT3 MGSF3441XT1
Description OBSOLETE - REPLACEMENT P/N# - NTGS3441T1
Low rDS(on) Small-Signal MOSFETs tmos Single P-Channel field effect transistors

File Size 94.79K  /  4 Page

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    MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E

ETC
Motorola, Inc
ON Semiconductor
Part No. MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E
Description 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
tmos POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
tmos E-FET Power field effect transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate

File Size 275.97K  /  10 Page

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    MTP4N40E MTP4N40E-D

Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
Part No. MTP4N40E MTP4N40E-D
Description tmos POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
tmos E-FET Power field effect transistor N-Channel Enhancement-Mode Silicon Gate

File Size 239.59K  /  8 Page

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    MTP9N25E MTP9N25 MTP9N25E-D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTP9N25E MTP9N25 MTP9N25E-D
Description tmos POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
tmos E-FET Power field effect transistor N-Channel Enhancement-Mode Silicon Gate

File Size 206.06K  /  8 Page

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    MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D
Description tmos POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM tmos14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆
tmos POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
tmos E-FET Power field effect transistor N-Channel Enhancement Mode Silicon Gate

File Size 232.49K  /  8 Page

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    MMFT5P03HD ON2230 MMFT5P03HDT3 ON2229

MOTOROLA[Motorola, Inc]
Part No. MMFT5P03HD ON2230 MMFT5P03HDT3 ON2229
Description tmos MEDIUM POWER FET 5.2 AMPERES 30 VOLTS
From old datasheet system
tmos P-CHANNEL field FEECT tranSISTOR

File Size 194.79K  /  12 Page

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    MTD6N15 MTD6N15-1 MTD6N15T4 MTD6N15T4G

ON Semiconductor
Part No. MTD6N15 MTD6N15-1 MTD6N15T4 MTD6N15T4G
Description Power field effect transistor DPAK for Surface Mount
tmos Power 150V .3R

File Size 88.70K  /  8 Page

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    Motorola Mobility Holdings, Inc.
Part No. MTW10N40E
Description tmos E-FET POWER field effect tranSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

File Size 71.13K  /  2 Page

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    MTH8N90

MOTOROLA[Motorola, Inc]
Part No. MTH8N90
Description tranSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,8A I(D),TO-218AC
POWER field effect tranSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE tmos

File Size 394.62K  /  6 Page

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    MTD6N15 ON2513 MTD6N15-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD6N15 ON2513 MTD6N15-D
Description Power field effect transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM
From old datasheet system

File Size 231.61K  /  10 Page

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