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For igs Found Datasheets File :: 1574    Search Time::5.156ms    
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    RENESAS[Renesas Electronics Corporation]
Part No. HAF2012S HAF2012 HAF2012L
OCR Text ...BR) GSS igsS1 igsS2 igsS3 igsS4 igs (op) 1 igs (op) 2 IDSS VGS (off) RDS (on) RDS (on) |yfs| Coss td (on) tr td (off) tf VDF trr tos1 tos2 Min 10 -- 60 16 -2.8 -- -- -- -- -- -- -- 1.0 -- -- 6 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -...
Description Silicon N Channel MOS FET Series Power Switching

File Size 121.27K  /  10 Page

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    RENESAS[Renesas Electronics Corporation]
Part No. HAF2011S HAF2011 HAF2011L
OCR Text ...BR) GSS igsS1 igsS2 igsS3 igsS4 igs (op) 1 igs (op) 2 IDSS VGS (off) RDS (on) RDS (on) |yfs| Coss td (on) tr td (off) tf VDF trr tos1 Min 15 -- 60 16 -2.5 -- -- -- -- -- -- -- 1.0 -- -- 8 -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- ...
Description Silicon N Channel MOS FET Series Power Switching

File Size 113.81K  /  9 Page

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    HP[Agilent(Hewlett-Packard)]
Part No. ATF55143 ATF-55143 ATF-55143- ATF-55143-BLK ATF-55143-TR1 ATF-55143-TR2
OCR Text ...g s [1] Symbol VDS VGS VGD IDS igs Pdiss Pin max. TCH TSTG jc Parameter Drain-Source Voltage[2] Gate-Source Voltage[2] Gate Drain Voltage[2] Drain Current [2] Gate Current [5] Total Power Dissipation[3] RF Input Power[5] Channel Temper...
Description Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package

File Size 168.79K  /  21 Page

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    New Jersey Semiconductor
Part No. 3N169
OCR Text ... a = i25 o a v (br)ds x 'ds s igs s 2 5 1 0 1. 0 1 0 v 10 0 vd c nad c /iad c pad c o n characteristic s gat e threshol d voltag e (vo s = 1 0 vdc , i d * 1 0 ^adc ) 3n16 9 3n17 0 3n171 drain-sourc e on-voltag e (i d = 1...
Description Trans MOSFET P-CH 40V 0.05A 4-Pin TO-72

File Size 103.02K  /  2 Page

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    BUK7L06-34ARC

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7L06-34ARC
OCR Text ...10 V; Figure 2 IDM Ptot IDG(CL) igs(CL) Tstg Tj IDR IDRM EDS(CL)S peak drain current total power dissipation drain-gate clamping current gate-source clamping current storage temperature junction temperature reverse drain current (DC) peak r...
Description TrenchPLUS standard level FET

File Size 98.03K  /  14 Page

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    STP5NC90Z STP5NC90ZFP STB5NC90Z STB5NC90Z-1

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NC90Z STP5NC90ZFP STB5NC90Z STB5NC90Z-1
OCR Text ...VDS VDGR VGS ID ID IDM (q) PTOT igs VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Dr...
Description N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET

File Size 514.47K  /  13 Page

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    STP5NC70Z STP5NC70ZFP STB5NC70Z STB5NC70Z-1

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NC70Z STP5NC70ZFP STB5NC70Z STB5NC70Z-1
OCR Text ...VDS VDGR VGS ID ID IDM (1) PTOT igs VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Dr...
Description N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET

File Size 347.13K  /  12 Page

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    HAF2017 HAF2017-90L HAF2017-90S HAF2017-90STL HAF2017-90STR HAF2017L

Renesas Electronics Corporation
Part No. HAF2017 HAF2017-90L HAF2017-90S HAF2017-90STL HAF2017-90STR HAF2017L
OCR Text ...(BR)GSS igsS1 igsS2 igsS3 igsS4 igs(OP)1 igs(OP)2 IDSS VGS(off) |yfs| RDS(on) RDS(on) Coss td(on) tr td(off) tf VDF trr tos1 tos2 Min 1 -- 60 16 -2.5 -- -- -- -- -- -- -- 1.4 6 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- --...
Description Transistors>Switching/MOSFETs
Silicon N Channel Power MOSFET Power Switching

File Size 129.10K  /  9 Page

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    Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
Part No. AFP02N8-213 AFP02N8-212
OCR Text ...ain Current (IDS) Gate Current (igs) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH) Description The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise performan...
Description General Purpose Packaged PHEMT Chips 通用包装PHEMT器件芯片
LJT 32C 32#20 PIN PLUG

File Size 30.29K  /  4 Page

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    Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
Part No. AFP02N8-000
OCR Text ...ain Current (IDS) Gate Current (igs) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH) Value 6V -3 V IDSS 10 A 300 mW -65 to +150C 175C Electrical Specifications at 25C Parameter Saturated Drain Current (I...
Description X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
Circular Connector; No. of Contacts:11; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:19; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:19-11 RoHS Compliant: No
General Purpose PHEMT Chip

File Size 23.78K  /  4 Page

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For igs Found Datasheets File :: 1574    Search Time::5.156ms    
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