| |
|
 |
RENESAS[Renesas Electronics Corporation]
|
| Part No. |
HAF2012S HAF2012 HAF2012L
|
| OCR Text |
...BR) GSS igsS1 igsS2 igsS3 igsS4 igs (op) 1 igs (op) 2 IDSS VGS (off) RDS (on) RDS (on) |yfs| Coss td (on) tr td (off) tf VDF trr tos1 tos2 Min 10 -- 60 16 -2.8 -- -- -- -- -- -- -- 1.0 -- -- 6 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -... |
| Description |
Silicon N Channel MOS FET Series Power Switching
|
| File Size |
121.27K /
10 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
RENESAS[Renesas Electronics Corporation]
|
| Part No. |
HAF2011S HAF2011 HAF2011L
|
| OCR Text |
...BR) GSS igsS1 igsS2 igsS3 igsS4 igs (op) 1 igs (op) 2 IDSS VGS (off) RDS (on) RDS (on) |yfs| Coss td (on) tr td (off) tf VDF trr tos1 Min 15 -- 60 16 -2.5 -- -- -- -- -- -- -- 1.0 -- -- 8 -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- ... |
| Description |
Silicon N Channel MOS FET Series Power Switching
|
| File Size |
113.81K /
9 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
HP[Agilent(Hewlett-Packard)]
|
| Part No. |
ATF55143 ATF-55143 ATF-55143- ATF-55143-BLK ATF-55143-TR1 ATF-55143-TR2
|
| OCR Text |
...g s [1] Symbol
VDS VGS VGD IDS igs Pdiss Pin max. TCH TSTG jc
Parameter
Drain-Source Voltage[2] Gate-Source Voltage[2] Gate Drain Voltage[2] Drain Current [2] Gate Current [5] Total Power Dissipation[3] RF Input Power[5] Channel Temper... |
| Description |
Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
|
| File Size |
168.79K /
21 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
New Jersey Semiconductor
|
| Part No. |
3N169
|
| OCR Text |
... a = i25 o a v (br)ds x 'ds s igs s 2 5 1 0 1. 0 1 0 v 10 0 vd c nad c /iad c pad c o n characteristic s gat e threshol d voltag e (vo s = 1 0 vdc , i d * 1 0 ^adc ) 3n16 9 3n17 0 3n171 drain-sourc e on-voltag e (i d = 1... |
| Description |
Trans MOSFET P-CH 40V 0.05A 4-Pin TO-72
|
| File Size |
103.02K /
2 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Alpha Industries, Inc. ALPHA[Alpha Industries] Alpha Industries Inc
|
| Part No. |
AFP02N8-213 AFP02N8-212
|
| OCR Text |
...ain Current (IDS) Gate Current (igs) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH)
Description
The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise performan... |
| Description |
General Purpose Packaged PHEMT Chips 通用包装PHEMT器件芯片 LJT 32C 32#20 PIN PLUG
|
| File Size |
30.29K /
4 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Alpha Industries, Inc. ALPHA[Alpha Industries] Alpha Industries Inc
|
| Part No. |
AFP02N8-000
|
| OCR Text |
...ain Current (IDS) Gate Current (igs) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH) Value 6V -3 V IDSS 10 A 300 mW -65 to +150C 175C
Electrical Specifications at 25C
Parameter Saturated Drain Current (I... |
| Description |
X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET Circular Connector; No. of Contacts:11; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:19; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:19-11 RoHS Compliant: No General Purpose PHEMT Chip
|
| File Size |
23.78K /
4 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|