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  fullpak-3 Datasheet PDF File

For fullpak-3 Found Datasheets File :: 438    Search Time::5.985ms    
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    IRF[International Rectifier]
Part No. IRFI5210
OCR Text ...ety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The mo...3 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C ...
Description HEXFET Power MOSFET

File Size 144.67K  /  8 Page

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    ONSEMI[ON Semiconductor]
Part No. MJF45H11 MJF44H11
OCR Text ...PNP) PACKAGE DIMENSIONS TO-220 FULLPAK TRANSISTOR CASE 221D-03 ISSUE G -TF Q A 123 SEATING PLANE -B- C S U NOTES: 1. DIMENS...3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN...
Description Complementary Power Transistors

File Size 81.01K  /  8 Page

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    IRFIZ46N

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFIZ46N
OCR Text ...ety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The mo...3 20 230 16 4.5 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units A W W/C V mJ A m...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V Rds(on)=0.020ohm Id=33A)
Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=33A) 功率MOSFET(减振钢板基本\u003d 55V的,的Rds(on)\u003d 0.020ohm,身份证\u003d 33A条)

File Size 101.04K  /  8 Page

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    ONSEMI[ON Semiconductor]
Part No. MURF1620CT MURF1620CTD
OCR Text ...20CT PACKAGE DIMENSIONS TO-220 FULLPAK TRANSISTOR CASE 221D-03 ISSUE G -T- F Q A 123 SEATING PLANE -B- C S U NOTES: 1. DIME...3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN...
Description 16A 200V Ultrafast Rectifier
SWITCHMODE Power Rectifier

File Size 51.34K  /  4 Page

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    IRFI9610G

International Rectifier
Part No. IRFI9610G
OCR Text ... cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercialindustrial applications. The mou...3 -8.0 27 0.22 20 100 -2.0 2.7 -11 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A...
Description HEXFET POWER MOSFET

File Size 167.03K  /  8 Page

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    SPP21N50C3 SPI21N50C3 SPB21N50C3 SPA21N50C3

INFINEON[Infineon Technologies AG]
Part No. SPP21N50C3 SPI21N50C3 SPB21N50C3 SPA21N50C3
OCR Text ...al resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD v...3) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4) Electrical Characteristics, at Tj=...
Description Cool MOS?/a> Power Transistor
Cool MOS??Power Transistor
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
for lowest Conduction Losses & fastest Switching

File Size 338.27K  /  13 Page

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    IRG4IBC30KD

IRF[International Rectifier]
Part No. IRG4IBC30KD
OCR Text ...ions * Industry standard TO-220 FULLPAK C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC...3.7 65 --- Units C/W g (oz) www.irf.com 1 4/24/2000 IRG4IBC30KD Electrical Characteri...
Description 600V UltraFast 8-25 kHz Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 193.53K  /  10 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPP12N50C3 SPI12N50C3 SPA12N50C3 SPB12N50C3
OCR Text ...al resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD v...3) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4) - 35 - 1 3.8 62 80 62 260...
Description Cool MOSPower Transistor 酷马鞍山⑩功率晶体管
for lowest Conduction Losses & fastest Switching
COOL MOS⒙ POWER TRANSISTOR
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor

File Size 361.86K  /  13 Page

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    IRG4IBC30F IRG4IBC30FD

International Rectifier
Part No. IRG4IBC30F IRG4IBC30FD
OCR Text ...witching losses and EMI TO-220 FULLPAK Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM...3 11 120 120 8.5 120 2500 20 45 18 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 217.47K  /  10 Page

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    IRG4IBC30UD

International Rectifier
Part No. IRG4IBC30UD
OCR Text ...witching losses and EMI TO-220 FULLPAK Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM...3.0 Temperature Coeff. of Threshold Voltage --- Forward TransconductanceT 3.1 Zero Gate Voltage Coll...
Description 600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 225.22K  /  10 Page

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For fullpak-3 Found Datasheets File :: 438    Search Time::5.985ms    
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