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Toshiba Electronic Devices & Storage Corporation |
Part No. |
ST1000GXH35
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Description |
IEGT, 4500 V, 1000 A, 2-120B1S
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Tech specs |
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Official Product Page
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POLYFET[Polyfet RF Devices]
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Part No. |
F1280
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Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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File Size |
39.02K /
2 Page |
View
it Online |
Download Datasheet
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POLYFET[Polyfet RF Devices]
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Part No. |
F1260
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Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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File Size |
38.02K /
2 Page |
View
it Online |
Download Datasheet
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POLYFET[Polyfet RF Devices]
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Part No. |
F1240
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Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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File Size |
40.50K /
2 Page |
View
it Online |
Download Datasheet
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POLYFET[Polyfet RF Devices]
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Part No. |
F1222
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Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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File Size |
37.78K /
2 Page |
View
it Online |
Download Datasheet
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POLYFET[Polyfet RF Devices]
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Part No. |
F1221
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Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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File Size |
36.85K /
2 Page |
View
it Online |
Download Datasheet
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POLYFET[Polyfet RF Devices]
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Part No. |
F1210
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Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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File Size |
36.84K /
2 Page |
View
it Online |
Download Datasheet
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