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  crss ciss Datasheet PDF File

For crss ciss Found Datasheets File :: 31035    Search Time::0.781ms    
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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...) tr td(off) tf LD LS ciss Coss crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    AOD4132

Alpha & Omega Semiconductors
Part No. AOD4132
OCR Text ...= 4.5V) UIS Tested Rg,ciss,Coss,crss Tested TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous D...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 113.13K  /  5 Page

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    CPH5824

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. CPH5824
OCR Text ...n)1 RDS(on)2 RDS(on)3 ciss Coss crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V ID=0.1A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=...
Description MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications MOSFET的:N沟道MOSFET的硅SBD智能交通:肖特基二极管通用开关器件应
Nch SBD

File Size 44.26K  /  6 Page

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    CPH5826

Sanyo Semicon Device
Part No. CPH5826
OCR Text ...n)1 RDS(on)2 RDS(on)3 ciss Coss crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=4V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, ...
Description Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

File Size 46.39K  /  5 Page

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    EMH2401

Sanyo Semicon Device
Part No. EMH2401
OCR Text ...n)1 RDS(on)2 RDS(on)3 ciss Coss crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=4V ID=0.8A VGS=2.5V ID=0.3A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, ...
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 34.78K  /  4 Page

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    EMH2402

Sanyo Semicon Device
Part No. EMH2402
OCR Text ...yfs RDS(on)1 RDS(on)2 ciss Coss crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=10V ID=1A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Te...
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 35.66K  /  4 Page

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    TF218THC

Sanyo Semicon Device
Part No. TF218THC
OCR Text ...V(BR)GDO VGS(off) IDSS yfs ciss crss GV GVV Gvf ZIN ZO THD VNO IG=-100A VDS=5V, ID=1A VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1MHz VDS=5V, VGS=0V, f=1MHz VIN=10mV, f=1kHz VIN=10mV, f=1kHz, VCC=4.51.5V f=1kHz to 110Hz f=1kHz ...
Description N-channel Silicon Junction FET Electret Condenser Microphone Applications

File Size 43.75K  /  5 Page

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    FDA8440

Fairchild Semiconductor
Part No. FDA8440
OCR Text ...namic Characteristics ciss Coss crss RG Qg(tot) Qg(2) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Thres...
Description N-Channel PowerTrench? MOSFET
N-Channel PowerTrench㈢ MOSFET

File Size 298.41K  /  8 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...tr td off tf Ld Ld Ls ciss Coss crss Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Forward transconductance Gate source leakage current Zero gate voltage drain current Total gate charge Gate-source c...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ...= 0V, V DS = -15V, = 1.0MHz crss Reverse Transfer Capacitance Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Q...ciss 8 200 crss 4 0 1 10 100 A 0 0 2 4 6 FOR TEST CIRCUIT SEE FIGURE 11 8 1...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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