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  coss.eff Datasheet PDF File

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    IRFPS3810

IRF[International Rectifier]
Part No. IRFPS3810
OCR Text ...td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forwa...
Description Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A?
Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A)
Power MOSFET(Vdss=100V Rds(on)=0.009ohm Id=170A)
Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A?)

File Size 122.48K  /  8 Page

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    IRFPS3815

IRF[International Rectifier]
Part No. IRFPS3815
OCR Text ...td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-S...
Description 150V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
Power MOSFET(Vdss=150V, Rds(on)=0.015ohm, Id=105A)

File Size 100.34K  /  8 Page

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    IRFZ48Z IRFZ48ZL IRFZ48ZS

IRF[International Rectifier]
Part No. IRFZ48Z IRFZ48ZL IRFZ48ZS
OCR Text ...td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 277.35K  /  12 Page

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    IRF7488 IRF7488TR

IRF[International Rectifier]
Part No. IRF7488 IRF7488TR
OCR Text ...Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS ...eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Mill...
Description 80V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 138.79K  /  9 Page

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    IRF830AL IRF830AS

IRF[International Rectifier]
Part No. IRF830AL IRF830AS
OCR Text ...Voltage and Current l Effective Coss specified (See AN 1001) l D2Pak TO-262 Absolute Maximum Ratings Parameter ID @ TC = 25C ID ...eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Mill...
Description 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)
Power MOSFET(Vdss=500V/ Rds(on)max=1.40ohm/ Id=5.0A)

File Size 152.88K  /  10 Page

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    IRF830A IRF830APBF

International Rectifier, Corp.
Part No. IRF830A IRF830APBF
OCR Text ...Voltage and Current l Effective Coss specified ( See AN 1001) l TO-220AB GDS Absolute Maximum Ratings Parameter ID @ TC = 25C ID...eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Mill...
Description HEXFET Power MOSFET HEXFET功率MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 138.21K  /  8 Page

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    IRFB3207 IRFS3207 IRFSL3207

IRF[International Rectifier]
Part No. IRFB3207 IRFS3207 IRFSL3207
OCR Text ...s Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Mil...eff. (ER) Effective Output Capacitance (Energy Related) --- Coss eff. (TR) Effective Output Capacita...
Description HEXFET Power MOSFET

File Size 382.32K  /  11 Page

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    LET20030C

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. LET20030C
OCR Text ...SS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 1 A ID = 1 A VDS = 26 V VDS = 26 V VDS = 26...
Description RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技

File Size 36.52K  /  5 Page

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    LET20030S

STMICROELECTRONICS[STMicroelectronics]
Part No. LET20030S
OCR Text ...SS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 1 A ID = 1 A VDS = 26 V VDS = 26 V VDS = 26...
Description RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

File Size 42.06K  /  4 Page

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    IRFBA1405 IRFBA1405P

IRF[International Rectifier]
Part No. IRFBA1405 IRFBA1405P
OCR Text ...td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-S...
Description Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A?)
Power MOSFET(Vdss=55V Rds(on)=5.0mohm Id=174A)
Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A)

File Size 171.96K  /  9 Page

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